In this manuscript, the inorganic perovskite CsPbI2Br and CsPbIBr2 are investigated as photoactive materials that offers higher stability than the organometal trihalide perovskite materials. The fabrication methods allow anti-solvent processing the CsPbIxBr3−x films, overcoming the poor film quality that always occur in a single-step solution process. The introduced diethyl ether in spin-coating process is demonstrated to be successful, and the effects of the anti-solvent on film quality are studied. The devices fabricated using the methods achieve a high-performance, self-powered and stabilized photodetectors with fast response speed. The results illustrate a great potential of all-inorganic CsPbIxBr3−x perovskites in visible photodetection and provide an effective way to achieve high performance devices with self-powered capability.

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Posted 18 Nov, 2020
On 24 Nov, 2020
Received 24 Nov, 2020
Received 18 Nov, 2020
On 16 Nov, 2020
On 16 Nov, 2020
On 15 Nov, 2020
Invitations sent on 15 Nov, 2020
On 15 Nov, 2020
On 15 Nov, 2020
On 11 Nov, 2020
Posted 18 Nov, 2020
On 24 Nov, 2020
Received 24 Nov, 2020
Received 18 Nov, 2020
On 16 Nov, 2020
On 16 Nov, 2020
On 15 Nov, 2020
Invitations sent on 15 Nov, 2020
On 15 Nov, 2020
On 15 Nov, 2020
On 11 Nov, 2020
In this manuscript, the inorganic perovskite CsPbI2Br and CsPbIBr2 are investigated as photoactive materials that offers higher stability than the organometal trihalide perovskite materials. The fabrication methods allow anti-solvent processing the CsPbIxBr3−x films, overcoming the poor film quality that always occur in a single-step solution process. The introduced diethyl ether in spin-coating process is demonstrated to be successful, and the effects of the anti-solvent on film quality are studied. The devices fabricated using the methods achieve a high-performance, self-powered and stabilized photodetectors with fast response speed. The results illustrate a great potential of all-inorganic CsPbIxBr3−x perovskites in visible photodetection and provide an effective way to achieve high performance devices with self-powered capability.

Figure 1

Figure 1

Figure 2

Figure 2

Figure 3

Figure 3

Figure 4

Figure 4

Figure 5

Figure 5
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