In this paper, we consider p-n-junctions, manufactured by diffusion or ion implantation in a heterostructures. We analyzed influence of existing in heterostructure missmatch induced stresses on the current-voltage characteristics of the p-n-junctions. We also introduce an analytical approach for analysis of mass and heat transfer in heterostructures with account changes of their parameters on time, as well as their nonlinearity and missmatch induced stresses. In this paper we introduce an analytical approach for prognosis of the considered processes.