3.1 Electronic and Optical properties:
Zr2Dy2O7 and Dy2Hf2O7 are crystalized in a fluorite structure (Fm3m), Dy2Ce2O7 crystallized in an orthorhombic structure (Pmma) as shown in Table 1.and Fig. 1.
With these structures, the nature of the atomic radius of each atom, the degree of oxidation one can predict magnetically and the electronic behavior of these compounds are shown in Table 2. However, a deep study on the behavior of each material will be made subsequently based on the theoretical simulation.
Table 1
Structural properties Dy2Ce2O7, Dy2Zr2O7, Dy2Hf2O7
|
Dy2Hf2O7
|
Dy2Zr2O7
|
Dy2Ce2O7
|
Lattice parameter (A)
Optimized value
|
10.5[28]
10.48
|
5.23 [29]
5.24
|
a = 3.37 ; c = 10.9 [31]
a = 3.38, c = 10.7
|
Table 2
electronic configuration and valence states of Dy, Zr, Ce and Hf atoms.
|
Dy
|
Zr
|
Ce
|
Hf
|
Electronic Configuration
|
4f10 6s2
|
4d² 5s²
|
4f¹ 5d¹ 6s²
|
4f¹⁴ 5d² 6s²
|
Oxidation
|
3
|
4
|
3,4
|
4
|
Valence
|
4f9
|
4d0
|
4f0
|
4f14 5d0
|
Based on the Table 2; the degree of oxidation allows us to know the occupied states, the empty states and to predict possible allowed optical transitions.
to ensure the neutrality in Dy2Ce2O7 oxidation degrees are: Ce4+ Dy3+ O2-, thus all the f-Ce states, d and s states are localized in conduction band, however the f-Dy states are those which will mainly contribute to valence band for the 3 types of compounds.
Based on the Figs. 2, 3,4 and Table 2; the valence band is constituted by p-O and f-Dy states, other states are localized on the conduction band. Therefore, all the allowed optical transitions are p-d and f-d: p-orbital of oxygen to d-orbital of Zr and Hf.
Dy2Hf2O7, Dy2Zr2O7 and Dy2Ce2O7 have an electronic band gap close to 1.89, 2.0 and 1.4 eV respectively.as cited in Table 3 compared to other works. These values are obtained using GGA and mBJ potential including spin-orbit coupling. It is well known that standard LDA and GGA are not appropriate to compute the band gap since giving too small band gaps or even a wrong metallic behavior rather than an insulating one in some cases.
Table 3
Band gap of the 3 compounds compared to other works.
|
Dy2Hf2O7
|
Dy2Zr2O7
|
Dy2Ce2O7
|
Band gap (eV)
Our results
|
2.946 eV [28]
1.89 eV
|
3.18 [30]
2.0
|
2.75 exp [31]
1.4
|
The band structure of the 3 compounds is illustrated on the Figs. 5 and 6, we have a direct band gap for the 3 types, with different values, the spin-orbit effect is already considered in the calculation and mBJ potential. These figures will be exploited to interpret the variation in effective mass qualitatively and quantitatively using the Eq. (3).
In fact, the decisive factor for the effective mass is the curvature of the dispersion curve at the top level, as in the second derivative. Large curvatures (large second derivative = small radius of curvature) give small values of the effective mass. On the other hand, small curvatures (small derivative of a second = large radius of curvature) give large values of the effective mass.
Table 4 gives the values of effective mass in Γ and M direction, we can see that these values are important in M and Γ direction for down states, for both electrons and holes, the opposite for the up states in the same directions, the values of m* are very low.
The mobility of charge carriers in a semiconductor is inversely proportional to their effective mass (m*). Thus, Dy2Hf2O7 and Dy2Zr2O7 have high mobility compared to Dy2Ce2O7.
According to these values of effective mass, we can deduce the lifetimes of the photo-excites charge carriers and controlling the quantum efficiency of the photo-to-current conversion mechanism in photo-catalysis process [32]
Table 4: Effective mass values for Dy2 (Ce, Hf, Zr)O7
Dy2Hf2O7
|
Γ direction
Up
|
Dn
|
M
Up
|
dn
|
holes *m0
|
-0.038
|
-0.43
|
-0.049
|
-13.97
|
electrons (m/m0)
|
0.039
|
10.55
|
0,0054
|
infini
|
Dy2Ce2O7
|
Γ direction
|
M
|
Up
|
down
|
Up
|
dn
|
holes *m0
|
-0.92
|
-0.479
|
-0.057
|
-0.18
|
electrons (m/m0)
|
0.07
|
0.27
|
0.057
|
0.238
|
Dy2Zr2O7
|
Γ direction
|
M
|
Up
|
Dn
|
Up
|
dn
|
holes *m0
|
-0.032
|
-0.11
|
-0.043
|
-84.74
|
electrons (m/m0)
|
0.046
|
0.22
|
0.063
|
0.18
|
3.2 Optical properties and Quantum efficiency
A photocatalytic application requires a good absorption in the visible spectrum and a good optical performance, to confirm that the materials Dy2M2O7 can be photocatalytic, we calculated the optical properties of these materials precisely: absorption coefficient and quantum efficiency.
The quantum efficiency QE is an important parameter for its proportionality to the quantity of electrons/holes generated by semiconductors. It is computed using the following relation [33]:
QE=(1-R)(1-e−αt) (Eq. 4)
α is the absorption coefficient α(E) and R is the reflectivity R(E). The t parameter is the thickness of the sample. Here we have used the c parameter.
According to the above relation, we have computed the absorption coefficient and quantum efficiency of all compounds; the results are displayed in Figs. 7 and 8.
There is no absorption between 0 and 2 eV in Fig. 7, except for Dy2Zr2O7, it appears at 0.5 eV but its intensity is very weak. The first peak for Dy2Ce2O7 appears at 1.7 eV.
In Fig. 8, we report the quantum efficiency of the 3 compound Dy2(Zr/Ce/Hf)O7; as we can see the quantum efficiency of Dy2Ce2O7 reaches a maximum of 3% in visible range and it is very weak between 0 and 1.5 eV, both compounds have lower than 1% in the visible range.
3.3 Ce Doping effect in Dy2Zr2O7 on the optical and electronic properties
In the last paragraph we have studied the electronic properties of Dy2 (Hf, Ce, Zr)O7. Now, the question is, what will happen if we doped those materials and added a new state?
To get an answer for this question, we have doped Ce atoms in Dy2Zr2O7 (25% of Ce content) in two sites:
We have displayed the absorption coefficient and quantum efficiency in Figs. 8 and 9.
The major difference between both cases is the Ce doped in Zr site gives large absorption from zero and the quantum efficiency varies from 2–4% in visible range.
To explain this, we look for the answer from the density of states as displayed in Figs. 10 and 11 and band structure (Figs. 12 and 13).
In Zr site; f states of Cerium, are empty (Ce4+ :4f0) localized in band conduction at 3 eV above 4f-Dy states, the gap is about 1.7 eV, and the Fermi level is near the valence band (semi-conductor p type).
In Dy site, to ensure the neutrality of the system, we have (Dy3+ Ce3+ Zr4+ O-2). Ce has the configuration: 4f1 one electron remains in valence band and it is localized near the Fermi level as shown in Fig. 13 and Fig. 14, which gives metallic behavior on the system.
3.4-Photocatalytic activity
Figure 15 presents the edges of the conduction and valence bands calculated based on absolute electronegativity, which are calculated from the ionization energy and electron affinity, and the potential H+/H2O and O2/H2O.
-
For Dy2Ce2O7 and Dy2Hf2O7, the gap is large and exceeds the optimal value. Even the location of the bands is out of zone.
-
DyZr2O7 is the best candidate to be a catalyst because the band edges are positioned in the "redox potential" zone.
-
Doping Dy2Zr2O7 with Cerium in Zr site makes the system more accurate and promoter for photocatalytic application