The reported work demonstrates the application of common source amplifier circuit using gate-all-around gate stacked charge plasma nanowire field effect transistor (GAA GS CP NW FET). Primarily, the impact of the gate stacking (GS) technique upon the Gate-All-Around Charge Plasma Nanowire Field Effect Transistor (GAA CP NW FET) structure is explored. In which GAA GS CP NW FET structure resulted in excellent electrostatic control over the channel by incorporating the advantages of GAA structures. The transfer characteristics have been enhanced with the gate stacking (SiO2 + high k) technique when employed at the dielectric region of the structure. The charge plasma concept which is applied in the proposed device helped in reducing the threshold voltage fluctuations. A contrast is drawn between GAA CP NW FET and GAA GS CP NW FET structures in terms of analog and RF analysis. Linearity parametric analysis were made to examine the distortion less digital communication and a comparison is made between the structures. The proposed structure is then utilized for designing a common source amplifier circuit and contrasted with the GAA CP NW FET structure. With the applied gate stacking technique, the proposed structure resulted in improved ON-current, reduced OFF-current, enhanced current ratio. The CS amplifier circuit application resulted in improved Vout and gain attributes with the proposed GAA GS CP NW FET structure when compared with Metal Oxide Semiconductor FET (MOSFET), Tunnel FET (TFET) and GAA CP NW FET structure proving its capability for forthcoming nanoscale circuit applications.