Carbon nanotube (CNT) field-effect transistors (FETs) have been considered ideal building blocks for radiation-hardened integrated circuits (ICs), the demand for which is exponentially growing, especially in outer space exploration and the nuclear industry. Many studies on the radiation tolerance of CNT-based electronics have focused on the total ionizing dose (TID) effect, while few works have considered the single event effects (SEEs) and displacement damage (DD) effect, which are more difficult to measure but may be more important in practical applications. We first executed measurements of the SEEs and DD effect of CNT FETs and ICs and then presented a comprehensive radiation effect analysis of CNT electronics. The CNT ICs without special irradiation reinforcement technology exhibit a comprehensive radiation tolerance, including a 1×104 MeV∙cm2/mg level of the laser-equivalent threshold linear energy transfer (LET) for SEEs, 2.8×1013 MeV/g for DD and 2 Mrad (Si) for TID, which are at least 4 times higher than those in conventional radiation-hardened ICs. The ultrahigh intrinsic comprehensive radiation tolerance will promote the applications of CNT ICs in high-energy solar and cosmic radiation environments.