Geometrical information of fluorescent sensor AHM
The sensor AHM has been optimized in the S0 state. The optimized geometric structures are shown in Fig. 1b (referred to AHM-a). In Table 1, the ∠C3C2N1C4 is 157°, meanwhile, two single bonds, named C2–N1 and C4–C5 are observed, and the rotation between the single bonds makes the structure of AHM more flexible. Additionally, the distance between H2-N1 is 3.66Å, and there is no intramolecular hydrogen bond between them. However, there is a hydrogen bond between H1 and N1 with a bond length of 1.64 Å and the O1H1N1 angle of 149°, which prevents the rotation of the intramolecular single bond. Thus, it is not necessary to consider the rotation forces caused by the C4-C5 deformation. To investigate the rotation of the C2-N1 single bond, relaxation scanning of the C3C2N1C4 dihedral is performed. We have obtained a rotamer with a C3C2N1C4 dihedral angle of 47°, abbreviated as AHM-b (Fig. 1a). Furthermore, Fig. 1d shows that in the S0 state, the relative energy of AHM-a structure is 2.6 kcal/ mol lower than that of the AHM-b structure, which indicates that AHM-a is more stable. Thus, structure AHM-a is likely to exist.
Table 1
Geometrical information of chemical sensor AHM
|
∠C3C2N1C4
|
∠C2N1C4C5
|
∠O1H1N1
|
O1-H1
|
H1-N1
|
AHM-a-S0
|
157°
|
177°
|
149°
|
1.01Å
|
1.64Å
|
AHM-b-S0
|
47°
|
179°
|
148°
|
1.01Å
|
1.63Å
|
AHM-c-S0
|
138°
|
177°
|
138°
|
1.70Å
|
1.03Å
|
AHM-d-S0
|
137°
|
-12°
|
129°
|
0.97 Å
|
2.40 Å
|
AHM-TICT
|
-179°
|
91°
|
144°
|
0.98Å
|
1.84Å
|
AHM-c-S1
|
173°
|
-179°
|
148°
|
1.58Å
|
1.05Å
|
[a] All the data are obtained at the B3LYP/TZVP theory level. |
Excitation and emission process of AHM
In order to explore the photophysical properties of the sensor, the excitation and emission process of AHM were further analyzed. The calculated wavelengths and other data are listed in Table 2. As seen in Table 2, the S0→S1 transition for AHM-a is predicted at about 403 nm with oscillator strength of 0.7211, and the process is from HOMO to LUMO. For S0→S1 of AHM-a, during the excitation process, the distribution region of the electron does not change significantly, which also means that the excitation of S0→S1 is a local excitation (LE). Here, hole-electron analysis is also used. And only 0.08 electrons are transferred between the A part and B part. In addition, as listed in Table 3, the D index is relatively small, which provides direct evidence for proving that S0→S1 is LE state. The proton transfer reaction, triggered by a strong hydrogen bond between H1 and N1, could generate the new isomer AHM-c (Fig. 1c) was obtained by the ground state relaxation scanning the distance between H1 and N1. As shown in Table 1, ∠C3C2N1C4 and ∠C2N1C4C5 are 138°and 177°, respectively. As depicted in Fig. 1d, the product AHM-c is more stable than AHM-a. Also, the GSIPT energy barrier from AHM-a to AHM-c is merely 2.4 kcal/mol which indicates that the AHM-c structure is the most likely configuration. Consequently, the excitation and emission process of AHM-c will be further explored.
As is reported in Table 2, the dominant transition of AHM-c is the S0→S1 transition, with the oscillator strength of 0.5271 lying at 410 nm, which is assigned to HOMO→LUMO (98.1%) transition. The orbitals are plotted in Fig. 2. A total of 0.16 electrons are transferred from the A part to the B part during the excitation, and the charge transfer is not obvious. Moreover, the D index is relatively small, which means that the S0→S1 of AHM-c is a LE state. The geometry in the S1 state is optimized and given in Fig. 3a and Table 1. The C3C2N1C4 dihedral angle is 173°, which means there is a near planar structure in the S1 state. The fluorescence quenching is not caused by planar structure. As listed in Table 2, AHM-c is a bright state in the S1 state, and its oscillator strength is 0.9065. The calculated emission peak is 504 nm, which is consistent with the experimental value (500 nm). As is shown, the HOMO mainly distributes on the A part and B part while LUMO mainly distributes on the A part and C = N part. According to the hole-electron analysis, the charge transfer amount is relatively small (0.14 e). It is worth noting that the emission intensity observed at 500nm in the experiment is very weak, so the existence of a non-emission deactivation channel is assumed.
Table 2
Excitation and emission energies of the AHM, including the oscillator strength (f) and orbital transition (OT) contributions to the electronic exited states (CI).
|
transition
|
λ(nm/eV)
|
f
|
OT
|
CI(%)
|
Experiment
|
|
|
|
|
|
absorption
|
|
400/3.10
|
|
|
|
emission
|
|
500/2.48
|
|
|
|
AHM-a-S0
|
S0→S1
|
403/3.07
|
0.7211
|
H→L
|
98.3%
|
S0→S2
|
327/3.78
|
0.0406
|
H-1→L
|
90.3%
|
S0→S3
|
315/3.92
|
0.0508
|
H-2→L
H→L + 2
|
85.6%
5.4%
|
S0→S4
|
300/4.12
|
0.0315
|
H→L + 1
|
87.9%
|
AHM-b-S0
|
S0→S1
|
403/3.07
|
0.5952
|
H→L
|
95.4%
|
S0→S2
|
339//3.65
|
0.0123
|
H-1→L
|
90.1%
|
S0→S3
|
317/3.91
|
0.0836
|
H-2→L
H→L + 3
|
88.5%
7.3%
|
S0→S4
|
299/4.14
|
0.0178
|
H→L + 1
|
92.3%
|
AHM-c-S0
|
S0→S1
|
410/3.02
|
0.5271
|
H→L
|
98.1%
|
S0→S2
|
349/3.55
|
0.0246
|
H-1→L
|
40.6%
|
S0→S3
|
336/3.68
|
0.1087
|
H-1→L
|
51.3%
|
S0→S4
|
308/4.02
|
0.0806
|
H-2→L
|
42.3%
|
AHM-c-S1
|
S1→S0
|
504/2.45
|
0.9065
|
L→H
|
99.4%
|
AHM-TICT
|
S1→S0
|
4016/0.30
|
0.0001
|
L→H
|
99.4%
|
AHM-a-S0, AHM-b-S0 and AHM-c-S0 represent S0 state structures of a, b and c respectively. AHM-c-S1 represents S1 state structures of c. All the data are obtained at the B3LYP/TZVP theory level. |
Table 3
The exponent of the excited states for the sensor AHM, including the centroid distance (D), the degree of overlap (Sr), the width distribution (H), degree of separation (t), hole delocalization index (HDI) and electron delocalization index (EDI).
|
D(Å)
|
Sr
|
H(Å)
|
t(Å)
|
HDI
|
EDI
|
AHM-a S0→S1
|
0.63
|
0.73
|
3.45
|
-0.86
|
6.31
|
7.42
|
AHM-a S0→S3
|
1.66
|
0.74
|
3.18
|
-2.32
|
6.66
|
7.22
|
AHM-b S0→S1
|
0.68
|
0.69
|
3.33
|
-1.58
|
6.66
|
7.94
|
AHM-c S0→S1
|
0.72
|
0.71
|
3.26
|
-1.77
|
7.06
|
7.93
|
The origination of the non-emissive behavior of AHM
Generally, bending of the C = N double bond may result in the formation of non-luminous isomers. As shown in Fig. 4, the bending degree of AHM-a in the S0 state was studied by relaxing and scanning the dihedral angle of C2N1C4C5. The ∠C2N1C4 of AHM-a-S0 (Fig. 4a) and AHM-d-S0 (Fig. 4c) structure are 124°and 122°,respectively. As shown in Fig. 5, the structure of AHM-a in the S1 state was firstly optimized, and a distorted structure was found. The local HOMO is delocalized through the B part, and LUMO is mainly localized on the C = N and A part, with complete charge separation. Furthermore, a total of 0.40 electrons are transferred from the left moiety to the right moiety during the S1→S0 excitation by using hole-electron analysis. As listed in Table 1, ∠C3C2N1C4 and ∠C2N1C4C5 are − 179°and 91°, respectively. Moreover, by TDDFT calculation, the oscillator strength is almost zero (0.0001). This indicates that in the S1 state, AHM-a is a typical TICT state and then named as AHM-TICT. However, the bending angle of the N1-C4 double bond requires the energy of 30.17 kcal/mol. Thus, the TICT state cannot be attained by direct excitation and excited state relaxation from AHM-d-S0.
In order to explore the pathway to the TICT state, the H1-N1 distance of AHM-c in the S1 state was relaxed-scanned. As shown in Fig. 6, the energy barrier of ESIPT from AHM-c-S1 to the transition state is merely 2.08kcal/mol. Moreover, the product produced by ESIPT happens to be AHM-a-S1, also known as AHM-TICT, which indicates that ESIPT triggers the distortion of the structure and spontaneously reaches the TICT state. Due to the higher energy barrier from AHM-a to AHM-d, it is difficult to form AHM-d structure. In the S1 state, AHM-c carries out ESIPT process and further triggers the TICT state.
IR vibrational spectra and RDG isosurfaces of sensor AHM
See in Fig. S1, the IR spectra of the main hydrogen bonds involved in the S0 and S1 states have been computed. For the AHM, the O1-H1 peak shifts from 3563 cm− 1 in the S0 state to 2945 cm− 1 in the S1 state. The IR vibrational frequency of O1-H1 bond of AHM has a red shift of 618 cm− 1, which indicates that the AHM sensor has a large Stokes shift. It can also be manifested that the intramolecular hydrogen bond in S1 state is much stronger than that in S0 state through the analysis of stretching vibration frequencies.
As shown in the RDG scatter graph of Fig. S2 (a), the value range of the RDG isosurfaces is set from − 0.05 to 0.05. The spike peaks of the AHM complex are observed and located at -0.0408 (Fig. S2 (b)). The interaction type is assigned to hydrogen bond interaction and the more to the left of the peak, the stronger the hydrogen bond is. In the diagram, it can be seen that the part representing the hydrogen bonding interaction in O1-H1…N1 presents a ring in the RDG isosurfaces. There is a strong hydrogen bond interaction between H proton and N receptor in the S1 state.
Al3+sensing mechanism of AHM
In the previous sections, the photo-physical process of the AHM was clarified. Next, the Al3+ detecting mechanism is explored. The reaction sites of hydrogen bonded donor and acceptor and their interactions can be analyzed by electrostatic potential (ESP). As shown in Fig. 7a, the ESP surface of AHM in the S0 state is studied. The yellow ball and the blue ball correspond to the maximum and minimum values of the electrostatic potential respectively. The most negative site is located near O1 atom, and its value is -125kJ/mol. Thus, the interaction between Al3+ and the O1 position should be strong. Then, the complex formed between AHM and Al3+, is optimized, shown in Fig. 7b. Detailed geometric parameters are listed in Table 4. In order to ensure the rationality of the configuration in the coordination regions, Mayer bond order analyses of the AHM-Al is conducted through the Multiwfn program. The Mayer bond orders of three bonds (Al-O1, Al-O2, Al-N1) are 0.73, 0.72, 0.53 respectively. These results indicate that the bonds of the Al-O1, Al-O2 and Al-N1 are the coordinate bond. And the coordinate bond of Al-O1 and Al-O2 are stronger than Al-N1 coordinate bond in the AHM-Al complexes.
As listed in Table 4, the structure of AHM-Al in the S1 state is very similar to that in the S0 state. In the S1 state, the flatness of the molecule increases and the non-emitting TICT state is eliminated. Furthermore, the HOMO and LUMO orbitals of the ligand (AHM-a) and the complexes (AHM-Al) are also compared and analyzed. The energy gaps between HOMO and LUMO are found as 3.526 eV and 2.479 eV, respectively, for AHM-a and AHM-Al complex (Fig. 8). This indicates that AHM-Al complex is more stabilized than that of AHM-a. For AHM-Al, the electron is confined to the A part, and the distribution region of the electron does not change significantly before and after the excitation. Meanwhile, the emission process of AHM-Al is studied. As shown in Table 5, the S1→S0 emission with large oscillator strength of 0.9313 generates π→π* transition character, which means the AHM-Al is emissive. Moreover, Al3+is not involved in the emission process, who eliminates the original TICT state.
Table 4
eometries of the complex (at B3LYP/TZVP theory level).
|
AHM-Al-S0
|
AHM-Al-S1
|
∠C3C2N1C4
|
149°
|
153°
|
∠C2N1C4C5
|
-161°
|
-169°
|
∠N1C4C5C6
|
19°
|
16°
|
Al-O1
|
1.79Å(0.73)
|
1.72Å(0.74)
|
Al-O2
|
1.84Å(0.72)
|
1.77Å(0.71)
|
Al-N1
|
1.95Å(0.53)
|
1.85Å(0.55)
|
[a] The values in the brackets are calculated Mayer bond orders. [42] |
Table 5
Excitation and emission energies of the metal-sensor complexes (B3LYP/ TZVP).
|
transition
|
λ(nm/eV)
|
f
|
OT
|
CI (%)
|
AHM-Al-S0
|
S0→S1
|
431/2.87
|
1.2638
|
H→L
|
94.4%
|
S0→S2
|
422/2.94
|
0.0214
|
H→L
H-1→L
|
50%
38%
|
S0→S3
|
411/3.01
|
0.1623
|
H-1→L
|
92%
|
AHM-Al-S1
|
S1→S0
|
530/2.34
|
0.9313
|
L→H
|
97%
|
aAHM-Al represents the triple-coordinated organometallic compound formed between AHM and Al3+. |