Multilevel resistive switching memory based on a CH3NH3PbI3-xClx film with potassium chloride additives
High-quality CH3NH3PbI3-xClx (MAPIC) films were prepared using potassium chloride (KCl) as an additive on indium tin oxide(ITO)-coated glass substrates using a simple one-step and low-temperature solution reaction. The Au/KCl-MAPIC/ITO/Glass devices exhibited obvious multilevel resistive switching behavior, moderate endurance, and good retention performance. Electrical conduction analysis indicated that the resistive switching behavior of the KCl-doped MAPIC films was primarily attributed to the trap-controlled space-charge-limited current conduction that was caused by the iodine vacancies in the films. Moreover, the modulations of the barrier in the Au/KCl-MAPIC interface under bias voltages were thought to be responsible for the resistive switching in the carrier injection trapping/detrapping process.
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Posted 27 May, 2020
On 17 May, 2020
On 16 May, 2020
On 16 May, 2020
On 23 Mar, 2020
Received 22 Mar, 2020
Received 21 Mar, 2020
On 18 Mar, 2020
On 18 Mar, 2020
Invitations sent on 06 Mar, 2020
On 26 Feb, 2020
On 26 Feb, 2020
On 25 Feb, 2020
On 25 Feb, 2020
Multilevel resistive switching memory based on a CH3NH3PbI3-xClx film with potassium chloride additives
Posted 27 May, 2020
On 17 May, 2020
On 16 May, 2020
On 16 May, 2020
On 23 Mar, 2020
Received 22 Mar, 2020
Received 21 Mar, 2020
On 18 Mar, 2020
On 18 Mar, 2020
Invitations sent on 06 Mar, 2020
On 26 Feb, 2020
On 26 Feb, 2020
On 25 Feb, 2020
On 25 Feb, 2020
High-quality CH3NH3PbI3-xClx (MAPIC) films were prepared using potassium chloride (KCl) as an additive on indium tin oxide(ITO)-coated glass substrates using a simple one-step and low-temperature solution reaction. The Au/KCl-MAPIC/ITO/Glass devices exhibited obvious multilevel resistive switching behavior, moderate endurance, and good retention performance. Electrical conduction analysis indicated that the resistive switching behavior of the KCl-doped MAPIC films was primarily attributed to the trap-controlled space-charge-limited current conduction that was caused by the iodine vacancies in the films. Moreover, the modulations of the barrier in the Au/KCl-MAPIC interface under bias voltages were thought to be responsible for the resistive switching in the carrier injection trapping/detrapping process.
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Due to technical limitations, full-text HTML conversion of this manuscript could not be completed. However, the manuscript can be downloaded and accessed as a PDF.