Flexible electronics technology, as an emerging technology with great potential, is promising in the fields of display [1], sensing [2–4] and energy storage [5, 6]. It requires materials to be light, thin and flexible. Graphene, as an attractive two-dimensional (2D) material, is a competitive candidate for flexible materials due to its excellent mechanical flexibility.
Commonly, the flexibility of a material is characterized by bending modulus. However, it’s difficult to accurately measure the bending modulus of graphene. The reported bending modulus of graphene varies in a wide range from 0.8 to 10000 eV [7–10]. The large difference in bending modulus of graphene can be ascribed to both the sample quality and measurements.
So far, it is common sense that the mechanical strength of graphene is closely related to its structural details. For example, graphene grain boundaries (GBs) can affect the mechanical strength of graphene [11–14]. Depending on the density and detailed arrangement of defects, the intrinsic strengths of graphene GBs vary from 46 to 95 GPa [12], lower than those (102 GPa in zigzag direction and 113 GPa in armchair direction) of pristine graphene. Meanwhile, the residual functional groups in graphene fabricated from reduced graphene oxide (GO) can also decrease the mechanical strength of graphene [15–17]. Generally, the larger the functional group coverage is, the lower the mechanical strength will be. Compared with the ~ 1 TPa of graphene, Young’s modulus of GO can be degraded to 290 GPa with increasing the functional group coverage to 70% [15].
In addition to the mechanical strength, flexibility of graphene also depends closely on geometry. When incorporating topological defects such as pentagons and heptagons, various graphene allotropes can be formed [18]. Particularly, planar graphene allotropes with pentagons and heptagons show lower bending moduli than graphene, exhibiting superior flexibility [19]. Besides, for the graphene functionalized with groups like hydroxyls and epoxides, the bending modulus is quite different from that of pristine graphene. The measured bending modulus of GO can be as low as ~ 0.026 eV [20], far below that of graphene. Further theoretical calculations show that the bending modulus of GO can be either lower or higher than that of graphene, depending on the type and coverage of the functional groups, as well as the bending direction [21, 22]. For example, hydroxyls can obviously enhance the bending modulus of GO up to 17.5 eV, but epoxides can reduce the bending modulus of GO to 1.2 eV, lower than that of graphene (1.5 eV) [21]. In addition, external strain can effectively tailor the bending modulus of graphene. When graphene is stretched, the bending modulus can be significantly degraded due to the weakening of carbon bonds [10].
Traditionally, the bending modulus is described by the classical thin plate theory. According to the thin plate theory, the bending modulus is calculated by \(D=E{h^3}/12(1 - {\upsilon ^2})\), where D is bending modulus, E is Young’s modulus, h is thickness and υ is Poisson’s ratio. From the thin plate theory, thickness is a key parameter that determines the bending modulus of a material. However, this formula applies to a perfectly glued multilayer with N identical layers [23]. When the interlayer interaction changes, this formula can be unsuccessful, such as failing in multilayer graphene [23, 24]. Furthermore, lots of monolayer 2D materials are not flat and show surface corrugations, which also have a certain thickness (amplitude of corrugation). So how about the relationship between the bending modulus and thickness in a monolayer 2D material with surface corrugation since the thin plate theory could not be suitable in this case?
Previously, it was reported that for the wrinkled graphene formed of hexagonal carbon rings, the bending modulus increases by the square power of wrinkling amplitude when using cosine functions to model the wrinkling of the surface [25]. This square power of rippling amplitude related bending modulus is obtained based on the von Karman theory with considering the nonlocal stress. In addition to modeling wrinkling of graphene by using cosine functions, incorporating topological defects such as pentagons and heptagons can also induce wrinkling as reported in rippled graphene allotropes. Through intensive literature research, plenty of rippled graphene allotropes with varied thickness have been reported through introducing topological defects in graphene, such as graphene with Stone-Wales defects [26], CG568 [27], egg-tray graphene [28], fused C26 polyhedra [29], Hexa-C20 [30], and penta-graphene [31]. Commonly, these rippled graphene allotropes have different carbon rings and structural patterns. The thickness of rippled graphene allotrope comes from the positive and negative curvature in geometry. For example, pentagon and heptagon will introduce positive and negative curvature separately in graphene [32]. In addition, the thicknesses and bending moduli of these rippled graphene allotropes with different topological defects and structural patterns will be significantly different.
Meanwhile, due to the high symmetry and stability of egg-tray graphene (formation energy is only ~ 0.2 eV/atom), and it is easy to dope and construct derivative configurations with similar topological defect structures, which is a typical and ideal theoretical model of rippled graphene allotropes. Therefore, in this work, mainly taking the egg-tray graphene as an example, we studied their relationship between the bending modulus and thickness using the first-principles calculations. The calculation results demonstrate that the bending modulus of egg-tray graphene depends on several factors, such as geometry, bending curvature and thickness. Particularly, when eliminating the effects of structural pattern and bending curvature, the bending modulus could be linearly related to thickness. Moreover, this linear relationship is still kept under doping modification.