Competition between electrons Coulomb repulsion and impurity potential on the effective system band structure and phase diagram of an electrons interacting impurity doped square lattice in the half band filling investigate. For this purpose, we introduce a method for studying this system in the dynamical mean field theory (DMFT) + coherent potential approximation (CPA) and multi-site beyond super cell approximation. By using calculated realistic band structures, competition between these parameters in the system phase diagram investigate. Our calculated band structures shows that (δ =4t), u = 0) is a point which Anderson insulator phase observes, by increasing Coulomb repulsion energy gap between splitted energy bands reduces and the gap between these bands completely disappears at uc1=3.11t and uc1=2.7t for the DMFT + CPA and 4 sites beyond super cell approximation respectively. For Coulomb repulsion strength greater than uc1, u > uc1, the two bands merges to a single energy band, hence creating a metallic AF state. The metallic state occurs in a region where the strength of the Coulomb interaction is large enough to overcome the disorder potential effects. This metallic state extended until uc2=13.99t and uc2=8.15t for DMFT + CPA and 4 sites beyond super cell approximation respectively. These metallic state sandwiches between two insulators states, Anderson-Mott insulation u < uc1 and Mott-Anderson insulation u > uc2. Another important result is observing partial flat valance and conduction bands at fermi energy for especial repulsion strengths.