See the published version of this preprint at Silicon.
This is a preprint, a preliminary version of a manuscript that has not completed peer review at a journal. Research Square does not conduct peer review prior to posting preprints. The posting of a preprint on this server should not be interpreted as an endorsement of its validity or suitability for dissemination as established information or for guiding clinical practice.
Learn more about In Review
A new preprint design is coming!
We have improved readability, clarity, accessibility, and opportunities for engagement.
Research Article
ABHINAV GUPTA
Rajkiya Engineering College Sonbhadra
Corresponding Author
ORCiD: https://orcid.org/0000-0002-7531-3728
License:
This work is licensed under a CC BY 4.0 License. Read Full License
This present article interprets the analytical models of central channel potential, the threshold voltage, and subthreshold current for Graded-Doped Junctionless-Gate-All-Around (GD-JL-GAA) MOSFETs. The parabolic approximation equation with appropriate boundary conditions has been adopted to solve the 2D Poisson’s equation for determining the central channel potential. The minimum channel potential is obtained by potential channel expression, and it is utilized to determine the threshold voltage and subthreshold current by using the Drift-Diffusion method. The behaviour of GD-JL-GAA MOSFETs has been examined by varying physical device parameters such as doping concentration (NDn), channel thickness (tsi), oxide thickness (tox), and channel length ratio (L1 : L2). The mathematical analysis shows that the nominal gate leakage current in GD-JL-GAA MOSFETs due to high graded abrupt junction inside the channel region. The analytical model results have been verified with simulation data extracted from a TCAD simulator.
Keywords
Junctionless MOSFETs, Gate-all-around (GAA), Graded Doping (GD), Threshold Voltage (VTH), Subthreshold Current
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
Loading...
Badges
Prescreen
This manuscript passed our Prescreen assessment
Complete author information
Appropriate declaration statements
Potential risks to human health
Prescreen
Peer Review Timeline
CURRENT STATUS: Published
View the published article at Silicon.
Version 1
Posted 15 Feb, 2021
No community comments so far
Editorial decision: Major revisions
On 23 Feb, 2021
Reviews received
Received 04 Feb, 2021
Reviewers invited
Invitations sent on 03 Feb, 2021
Editor invited
On 02 Feb, 2021
Editor assigned
On 02 Feb, 2021
First submitted
On 30 Jan, 2021
Metrics
Comments: 0
PDF Downloads: ...
HTML Views: ...
Subject Areas
Electronic Materials and Devices
Learn more about our company.
A new preprint design is coming!
We have improved readability, clarity, accessibility, and opportunities for engagement.
See the published version of this preprint at Silicon.
This is a preprint, a preliminary version of a manuscript that has not completed peer review at a journal. Research Square does not conduct peer review prior to posting preprints. The posting of a preprint on this server should not be interpreted as an endorsement of its validity or suitability for dissemination as established information or for guiding clinical practice.
Learn more about In Review
Research Article
ABHINAV GUPTA
Rajkiya Engineering College Sonbhadra
Corresponding Author
ORCiD: https://orcid.org/0000-0002-7531-3728
Badges
Prescreen
This manuscript passed our Prescreen assessment
Complete author information
Appropriate declaration statements
Potential risks to human health
Prescreen
Peer Review Timeline
CURRENT STATUS: Published
View the published article at Silicon.
Version 1
Posted 15 Feb, 2021
No community comments so far
Editorial decision: Major revisions
On 23 Feb, 2021
Reviews received
Received 04 Feb, 2021
Reviewers invited
Invitations sent on 03 Feb, 2021
Editor invited
On 02 Feb, 2021
Editor assigned
On 02 Feb, 2021
First submitted
On 30 Jan, 2021
Metrics
Comments: 0
PDF Downloads: ...
HTML Views: ...
Subject Areas
Electronic Materials and Devices
License:
This work is licensed under a CC BY 4.0 License. Read Full License
View the published article at Silicon.
This present article interprets the analytical models of central channel potential, the threshold voltage, and subthreshold current for Graded-Doped Junctionless-Gate-All-Around (GD-JL-GAA) MOSFETs. The parabolic approximation equation with appropriate boundary conditions has been adopted to solve the 2D Poisson’s equation for determining the central channel potential. The minimum channel potential is obtained by potential channel expression, and it is utilized to determine the threshold voltage and subthreshold current by using the Drift-Diffusion method. The behaviour of GD-JL-GAA MOSFETs has been examined by varying physical device parameters such as doping concentration (NDn), channel thickness (tsi), oxide thickness (tox), and channel length ratio (L1 : L2). The mathematical analysis shows that the nominal gate leakage current in GD-JL-GAA MOSFETs due to high graded abrupt junction inside the channel region. The analytical model results have been verified with simulation data extracted from a TCAD simulator.
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
Loading...