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Au/(nanocarbon-PVP)/n-Si SDs were fabricated and their current-conduction mechanisms (CCMs) have been examined in elaborative by utilizing current-voltage (I-V) characteristics in temperature range of 60-340K at (± 3V) ranges. The values of ideality factor (n) and zero-bias barrier height (ΦBo) determined from the linear-part of semilogarithmic forward bias IF-VF properties based on Thermionic-Emission (TE) theory revealed that decrease in ΦBo and increase in n with deccreasing temperature. Additionally, Richardson constant (A*) value was found several orders lower than its theoretical value. The values of ΦBo and n changed from 0.173 eV to 0.837 eV and 6.60 to 2.85 with increasing temperature from 60 K to 340 K. This positive temperature-coefficient (α) of ΦBo is inagreement with the bandgap of semiconductor or barrier height (BH) for the ideal diode. The calculated higher value of n at low temperatures was attributed to the inhomogeneities of BH rather than the interlayer, surface-states (Nss), and image-force lowering. With lowing temperatures, CCMs may be governed by tunneling over the lower barriers, via Nss, and generation recombination (GR), as well as TE and hence a complete description of CCM and understanding of the formation BH, remain a compelling problem. Nss-(Ec-Ess) profile was also obtained from IF-VF data for each temperature.
Keywords
Current-voltage-temperture (I-V-T) characteristics, Current-transport mechanisms, Origin of Barrier inhomogeneity, Energy and temperature dependent profiles of surface states
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This is a preprint, a preliminary version of a manuscript that has not completed peer review at a journal. Research Square does not conduct peer review prior to posting preprints. The posting of a preprint on this server should not be interpreted as an endorsement of its validity or suitability for dissemination as established information or for guiding clinical practice.
Original Research
Badges
Prescreen
This manuscript passed our Prescreen assessment
Complete author information
Appropriate declaration statements
Potential risks to human health
Prescreen
History
CURRENT STATUS: Posted
View the published article at Journal of Materials Science: Materials in Electronics.
Version 1
Posted 09 Feb, 2021
No community comments so far
Metrics
Comments: 0
PDF Downloads: ...
HTML Views: ...
License:
This work is licensed under a CC BY 4.0 License. Read Full License
View the published article at Journal of Materials Science: Materials in Electronics.
Au/(nanocarbon-PVP)/n-Si SDs were fabricated and their current-conduction mechanisms (CCMs) have been examined in elaborative by utilizing current-voltage (I-V) characteristics in temperature range of 60-340K at (± 3V) ranges. The values of ideality factor (n) and zero-bias barrier height (ΦBo) determined from the linear-part of semilogarithmic forward bias IF-VF properties based on Thermionic-Emission (TE) theory revealed that decrease in ΦBo and increase in n with deccreasing temperature. Additionally, Richardson constant (A*) value was found several orders lower than its theoretical value. The values of ΦBo and n changed from 0.173 eV to 0.837 eV and 6.60 to 2.85 with increasing temperature from 60 K to 340 K. This positive temperature-coefficient (α) of ΦBo is inagreement with the bandgap of semiconductor or barrier height (BH) for the ideal diode. The calculated higher value of n at low temperatures was attributed to the inhomogeneities of BH rather than the interlayer, surface-states (Nss), and image-force lowering. With lowing temperatures, CCMs may be governed by tunneling over the lower barriers, via Nss, and generation recombination (GR), as well as TE and hence a complete description of CCM and understanding of the formation BH, remain a compelling problem. Nss-(Ec-Ess) profile was also obtained from IF-VF data for each temperature.
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 12
Figure 13
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