This is a preprint, a preliminary version of a manuscript that has not completed peer review at a journal. Research Square does not conduct peer review prior to posting preprints. The posting of a preprint on this server should not be interpreted as an endorsement of its validity or suitability for dissemination as established information or for guiding clinical practice.
A new preprint design is coming!
We have improved readability, clarity, accessibility, and opportunities for engagement.
Research Article
Hicham Helal
Universite Djillali Liabes de Sidi Bel Abbes
Corresponding Author
ORCiD: https://orcid.org/0000-0002-3682-1957
License:
This work is licensed under a CC BY 4.0 License. Read Full License
Passivation of interface states in the Schottky barrier is an approach to enhance the properties of the Schottky devices. In this work, Au/0.8nm-GaN/n-GaAs Schottky structure is studied electrically in a wide temperature range. With increasing temperature, the reverse current Iinv increases from 1×10-7 A to 1×10-5 A, and the saturation current Is increases from 1×10-32 A to 5×10-7A. The series resistance Rs decreases with increasing temperature from 13.44 Ω to 4.25 Ω. The ideality factor n decreases from 10.64 to 1.15. The barrier height increases abnormally with increasing temperature from 0.54 eV at 80 K to 1.03 eV at 180 K, then decreases to 0.82 eV at 420 K. The abnormal behavior of and the high values of n in low temperature are due to the tunnel mechanisms effects, such as FE and TFE currents. FE mechanism is the dominant process at low temperatures (80-300 K) and TFE mechanism is the dominant one at high temperatures (300-420K). Finally, our structure presents an inhomogeneous barrier height, maybe caused by the thin GaN interface layer.
Keywords
nitridation, GaN/n-GaAs, Schottky diode, I-V-T, conduction mechanisms, barrier height
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
The full text of this article is available to read as a PDF.
Loading...
Badges
Prescreen
This manuscript passed our Prescreen assessment
Complete author information
Appropriate declaration statements
Potential risks to human health
Prescreen
History
CURRENT STATUS: Posted
Version 1
Posted 13 Feb, 2021
No community comments so far
Metrics
Comments: 0
PDF Downloads: ...
HTML Views: ...
Subject Areas
Electronic Materials and Devices
Learn more about our company.
A new preprint design is coming!
We have improved readability, clarity, accessibility, and opportunities for engagement.
This is a preprint, a preliminary version of a manuscript that has not completed peer review at a journal. Research Square does not conduct peer review prior to posting preprints. The posting of a preprint on this server should not be interpreted as an endorsement of its validity or suitability for dissemination as established information or for guiding clinical practice.
Research Article
Hicham Helal
Universite Djillali Liabes de Sidi Bel Abbes
Corresponding Author
ORCiD: https://orcid.org/0000-0002-3682-1957
Badges
Prescreen
This manuscript passed our Prescreen assessment
Complete author information
Appropriate declaration statements
Potential risks to human health
Prescreen
History
CURRENT STATUS: Posted
Version 1
Posted 13 Feb, 2021
No community comments so far
Metrics
Comments: 0
PDF Downloads: ...
HTML Views: ...
Subject Areas
Electronic Materials and Devices
License:
This work is licensed under a CC BY 4.0 License. Read Full License
Passivation of interface states in the Schottky barrier is an approach to enhance the properties of the Schottky devices. In this work, Au/0.8nm-GaN/n-GaAs Schottky structure is studied electrically in a wide temperature range. With increasing temperature, the reverse current Iinv increases from 1×10-7 A to 1×10-5 A, and the saturation current Is increases from 1×10-32 A to 5×10-7A. The series resistance Rs decreases with increasing temperature from 13.44 Ω to 4.25 Ω. The ideality factor n decreases from 10.64 to 1.15. The barrier height increases abnormally with increasing temperature from 0.54 eV at 80 K to 1.03 eV at 180 K, then decreases to 0.82 eV at 420 K. The abnormal behavior of and the high values of n in low temperature are due to the tunnel mechanisms effects, such as FE and TFE currents. FE mechanism is the dominant process at low temperatures (80-300 K) and TFE mechanism is the dominant one at high temperatures (300-420K). Finally, our structure presents an inhomogeneous barrier height, maybe caused by the thin GaN interface layer.
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
The full text of this article is available to read as a PDF.
Loading...