3.1 DSC
Figure 1 depicts the DSC thermo gram of carbon nanotube-reinforced TPI shape memory polymer composites at various mass fractions.
From the figure, it is observed that the thermo-gram of TPI shows a peak value at temperature of 317 K, which specifies the transition of state inside the specimen at that value. The number 317 K is also used as the crystallization melting temperature for TPI-SMP composite specimens, and the addition of SiC shifts this value to higher values. When the mass percentages of SiC are raised, the crystallization melting temperature increases somewhat when compared to TPI. This demonstrates that SiC reinforced TPI composites have much higher heat resistance than TPI composites. Furthermore, the crystallization melting temperature indicates an improvement in the micro-phase separation degree of polymeric chains, which becomes a measure of the composites' mechanical qualities. As a result, it is possible to conclude that increasing the crystallization melting temperature results in good mechanical characteristics of composites.
3.2 DMA
Figure 2 depicts the storage modulus and loss tangent (tan δ) curves generated from the dynamic mechanical study. It can be seen from the figure 2a, the storage modulus of TPI composites are found increased by adding the various weight percentages of SiC reinforcement. Among all the specimens fabricated, the TPI-0.8 SiC composite had shown a highest storage modulus and this is because the inclusion of silicon carbide which enhances the stiffness of TPI/ SiC - SMPC by developing the interfacial stress transmission [21]. Also, at the same time, it is inferred that when the SiC loading increased to 1.0%, the storage modulus is found decreased and this may be occurred due to formation of agglomeration of SiC due to vander waals force of attraction, resulting in a poor interaction between the TPI matrix and the SiC, the stress transfer is reduced. Figure 2b, depicts the tan δ curves of all composite specimens. The glass transition temperature (Tg) of TPI composite may be shown to be 313 K. This value then moves to a lower temperatures, when the TPI is reinforced with different weight percentages of SiC, which is an indication of enhancement of motion between the TPI polymer and the SiC filler.
3.3 Thermal Conductivity
Figure 3 depicts the thermal conductivity of TPI/ SiC shape memory polymer composites tested at 303 K, 323 K, and 343 K. It is observed, the thermal conductivity of TPI composites increased with the increasing content of filler loading up to 0.8 wt. %. Because SiCs have a high thermal conductivity, they create a continuous thermal conduction network chain in the TPI polymer. As the SiC wt. % increases, the SiC filler becomes more densely packed, strengthening the heat-flow route [22]. At the same time, as the SiC loading increases above 0.8 wt.%, the composite's improved range of thermal conductivity decreases. The explanation might be the creation of aggregation bundles of SiC, which causes poor adhesion with the matrix phase and so contributes less to the heat-conductive network chain.
3.4 Fracture Stress
Figure 4 describes the effect of different filler loading on fracture stress. It has been observed, the fracture stress shows an increasing trend towards the addition of increasing weight percentages of SiC loading as a filler material. This might be because the molecular chains of SiC and the TPI matrix re-form a uniform distribution after adding an adequate amount of SiC with higher mechanical characteristics. Because the reconstructed two-phase molecular segments have higher tensile strength, the specimens' TPI fracture stress rises. The fracture stress becomes low for the TPI specimen loaded with 1.0 wt.% SiC, which occurs when the two-phase molecular chains entangle and the molecular organisation inside the material is disordered after adding excessive SiC.
Furthermore, as indicated by the plots, the fracture stress of all specimens is temperature sensitive, and as the test temperature rises, the fracture stress of all specimens decreases accordingly. When the test temperature is 303 K, the fracture stress of all specimens is greater than 8 MPa, but it is greater than 4.5 MPa when the test temperature is raised to 343 K. This is due to the fact that TPI approaches the transition temperature as the test temperature rises. When the crystalline component of TPI begins to melt, the kinetic energy of the molecular segment rises. The mechanical properties of TPIs are diminished as a result of the crystallization being destroyed.
3.5 Shape Memory Properties
The TPI-0.8 SiC specimen is heated to a temperature 325 K above Tg, then cooled, and the curve is plotted at regular time intervals as shown in figure 5. The specimen, on the other hand, rebounds more quickly, with a fast recovery of more than 70 % of the bending detected during the first minute, although the shape recovery rate steadily declined subsequently. The bending angle curve and the shape recovery ratio curve intersect at a time span of roughly 60 seconds. This is because the reversible phase of TPI in the pre-deformation process is stretched from an ordered arrangement to a coiled condition under external strain [23]. In 6 to 7 minutes, almost 90% of the deformation was restored. Furthermore, the bending angle hits 90° relatively quickly, i.e. during the first minute, and then progresses slowly after that.
After 10 minutes, the bending angle is 7° and the form recovery rate is 96.5 %. The accumulated energy in frozen molecular chains is progressively released, and the thermal motion of molecules in TPI is similarly accelerated. As the weight percentage of SiC grew, the form recovery rates of all specimens decreased. This might be because the TPI/ SiC composite structure in a polymer composite has a higher recovery force than a TPI matrix. A SiC -loaded specimen is bigger than a TPI specimen and takes more energy to achieve form restitution. When the temperature remains constant, form memory recovery takes longer, resulting in a decrease in shape recovery rate.