DOI: https://doi.org/10.21203/rs.3.rs-254670/v1
Texturization of diamond cut crystalline silicon wafers undergoes a great difficulty due to deep saw marks on all over the surface of the wafer which makes hindrance to manufacture high efficiency solar cell. Textural result is not satisfactory after conventional texturization by potassium hydroxide (KOH)-isopropyl alcohol (IPA) followed by the saw damage removal by sodium hydroxide (NaOH) aqueous solution. The non-uniform texture surface has been observed with noticeable spots on the wafer surface. Surface texturization of diamond cut silicon wafer has been improved after introducing a new method in this paper. Small amount of surfactant along with KOH-IPA solution and curtailing saw damage removal step created better textural result than conventional texturization method. Optimize etching solution exhibited excellent anisotropic etching which eventually paved to improve solar cell characteristics than conventional surface texturing.
About 15% efficiency is found for conventional texturization in diamond cut wafers while above 19% efficiency was found for our proposed method. Batch process compatibility has been studied using stainless steel container instead of commercially available borosil glass bath.
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