The attributes of a memristor such as non-volatile, simple structure, no leakage current, and fast switching speed have unfolded enormous opportunities for various analog and digital applications. It is imperative to develop an accurate physical model of the memristor in order to design digital applications. The hitherto published memristor modeling approaches do not match with the practical memristor dynamics. A new model is developed by considering Schottky contact at the metal-insulator-metal (MIM) interfaces. In this research work, a novel memristor is also fabricated to validate the proposed model. A bead polymer based on methyl methacrylate and n-butyl methacrylate (MMBM) is firstly used to explore the resistive switching properties of the device. A cost-effective screen printing technique is first demonstrated to deposit the resistive switching layer for the fabrication of the memristor. The resistive switching behavior is observed in the sandwiched layer with a silver (Ag) as a top electrode and copper (Cu) as a bottom electrode. Surface morphology and electrical characterizations of the fabricated device are carried out by scanning electron microscope and 2 probe resistivity measurement. The results validate the formation of the Schottky barriers at the MIM interfaces of the fabricated device. The proposed model is compared with the device described in this paper having an error of 0.7609 (in terms of the relative root-meansquare error). Moreover, the NOR logic gate is simulated for the circuit simulation of the proposed model. This will pave a new path for the digital design applications based on the memristor.