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Hualing Zeng
University of Science and Technology of China
Corresponding Author
ORCiD: https://orcid.org/0000-0001-5869-9553
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The photocurrent generation in photovoltaics relies essentially on the interface of p-n junction or Schottey barrier with the photoelectric efficiency constrained by the Shockley-Queisser limit. The recent progresses have shown a promising route to surpass this limit via the bulk photovoltaic effect (BPVE) for crystals without inversion symmetry. Here we report the BPVE in two-dimensional (2D) ferroelectric CuInP2S6 with enhanced photocurrent density by two orders of magnitude higher than conventional bulk ferroelectric perovskite oxides. The BPVE is inherently associated to the room-temperature polar ordering in 2D CuInP2S6. We also demonstrate a crossover from 2D to 3D BPVE material with the observation of a dramatic decrease in photocurrent density when the thickness of the 2D material exceeds the free path length (\({l}_{0}\)) at around 40 nm. This work spotlights the potential application of ultrathin 2D ferroelectric materials for the third-generation photovoltaic cells.
Keywords
Two-dimensional ferroelectrics, CuInP2S6, bulk photovoltaic effect, photoferroics
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See the published version of this preprint at Nature Communications.
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Learn more about In Review
Article
Hualing Zeng
University of Science and Technology of China
Corresponding Author
ORCiD: https://orcid.org/0000-0001-5869-9553
Badges
Prescreen
This manuscript passed our Prescreen assessment
Complete author information
Appropriate declaration statements
Potential risks to human health
Prescreen
Peer Review Timeline
CURRENT STATUS: Published
View the published article at Nature Communications.
Version 1
Posted 24 Feb, 2021
Metrics
Comments: 0
PDF Downloads: ...
HTML Views: ...
License:
This work is licensed under a CC BY 4.0 License. Read Full License
View the published article at Nature Communications.
The photocurrent generation in photovoltaics relies essentially on the interface of p-n junction or Schottey barrier with the photoelectric efficiency constrained by the Shockley-Queisser limit. The recent progresses have shown a promising route to surpass this limit via the bulk photovoltaic effect (BPVE) for crystals without inversion symmetry. Here we report the BPVE in two-dimensional (2D) ferroelectric CuInP2S6 with enhanced photocurrent density by two orders of magnitude higher than conventional bulk ferroelectric perovskite oxides. The BPVE is inherently associated to the room-temperature polar ordering in 2D CuInP2S6. We also demonstrate a crossover from 2D to 3D BPVE material with the observation of a dramatic decrease in photocurrent density when the thickness of the 2D material exceeds the free path length (\({l}_{0}\)) at around 40 nm. This work spotlights the potential application of ultrathin 2D ferroelectric materials for the third-generation photovoltaic cells.
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
The full text of this article is available to read as a PDF.
There is NO Competing Interest.
This is a list of supplementary files associated with this preprint. Click to download.
- Supplementaryinformation.docx
Supplementary Information
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