Bi2Se3 thin film were prepared using vacuum thermal evaporation technique. the structure and surface topography for this sample were investigated using both of Diffraction Electron Microscope photos (DEM) and Transmission Electron Microscope (TEM). Bi2Se3 thin film had a direct energy gap which was determined by using measured optical parameters such as optical transmittance (T) and optical reflectance (R). The values for both of the oscillating energy ( Eo) ,dispersion energy (Ed) and ratio of the free carrier concentration on the effective mass (N/m*) were determined optically using the calculated values of refractive index (n). The dielectrical parameters such as dielectric loss (ε\) and dielectric tangent loss dielectric loss (ε\\) were calculated. The density of states (DOS) for both of valence band (Nv) and conduction band (Nc) and also position of Fermi level were determined. The nonlinear optical results such as third-order nonlinear optical susceptibility (χ(3)), nonlinear refractive index (n2) and nonlinear absorption coefficient (βc) were determined. The influence of temperature on IV results were studied, finally the dependence of all of Dispersion factor (D), parallel inductance (Lp) and Seebeck coefficient (S) values on temperature for this film were studied.