The hot electron transfer resulting fluorescence enhancement has the significant meaningful for theory and experiment of photoelectric devices studying. However, the laser emission based on hot electron transfer directly is difficult to realize because of the low transfer efficiency. To achieve laser with new generation mechanism base on hot-electron transfer, the photo-electric co-excitation are proposed for improving the efficiency of hot electron transfer. The lasing behavior at 532 nm are realized with a threshold of 5 kw cm-2&1 μA, which can be considered as the hot e transfer lasing. For details, number of hot electrons transfer process were described via transient absorption spectrum according to the improved ground state bleaching and excited state absorption signal in device ON. Through comparing to optical pump only, the quantum efficiencies of hot electron generation (HEG) and hot electron transfer (HET) were increased by this method about 31% and 31% (about 2.2 and 3.5 times), respectively. Efficient hot electron transferring from the charge regulation of metals by adding an electric field was confirmed. Most importantly, a triple gain mode coupling device including local surface plasmon, hot-e transfer and array oscillation was presented in experiment and simulation. This study can provide theoretical and experimental reference for the research of hot electron lasers and device.