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Research Article
Hongxia Yin
Institute of Advanced Electrical Materials, Qingdao University of Science and Technology
Corresponding Author
ORCiD: https://orcid.org/0000-0001-9892-8066
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This work is licensed under a CC BY 4.0 License. Read Full License
Space charge accumulation in the insulating layers of high-voltage directed current (HVDC) cables is the key factor that leads to their degradation and limits the operation safety. Hence, it is necessary to effectively inhibit carrier implantation to these layers. In this study, a new method is proposed to suppress the charge implantation to the cable insulation layer, a certain amount of Li4Ti5O12 nanopowder is doped in the semiconductive screen to enhance the internal conductive network and homogenize the electric field. The influences of Li4Ti5O12 particles in the semiconductive composite screen on the positive temperature coefficient effect and space charge injection process are explored. The obtained results reveal that the charge quantity in the insulation layer corresponding to the minimum peak resistivity is reduced by 49.7%, 58.9%, and 46.9% after the polarization at a Li4Ti5O12 content of 4 wt.% and electric field strengths of 10, 20, and 30 kV/mm, respectively.
Keywords
Li4Ti5O12 nanopowder, semiconductive composites, space charge injection, positive temperature coefficient effect
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This is a preprint. It has not completed peer review.
Research Article
Hongxia Yin
Institute of Advanced Electrical Materials, Qingdao University of Science and Technology
Corresponding Author
ORCiD: https://orcid.org/0000-0001-9892-8066
Badges
Prescreen
This manuscript passed our Prescreen assessment
Complete author information
Appropriate declaration statements
Potential risks to human health
Prescreen
History
CURRENT STATUS: Posted
Version 1
Posted 03 Mar, 2021
No community comments so far
Subject Areas
Materials Engineering
License:
This work is licensed under a CC BY 4.0 License. Read Full License
Space charge accumulation in the insulating layers of high-voltage directed current (HVDC) cables is the key factor that leads to their degradation and limits the operation safety. Hence, it is necessary to effectively inhibit carrier implantation to these layers. In this study, a new method is proposed to suppress the charge implantation to the cable insulation layer, a certain amount of Li4Ti5O12 nanopowder is doped in the semiconductive screen to enhance the internal conductive network and homogenize the electric field. The influences of Li4Ti5O12 particles in the semiconductive composite screen on the positive temperature coefficient effect and space charge injection process are explored. The obtained results reveal that the charge quantity in the insulation layer corresponding to the minimum peak resistivity is reduced by 49.7%, 58.9%, and 46.9% after the polarization at a Li4Ti5O12 content of 4 wt.% and electric field strengths of 10, 20, and 30 kV/mm, respectively.
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
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