To get an insight into the isotype heterojunction (IHJ) properties, the influence of gamma irradiation (GI) on the structural and electrical properties of n-ZnSe/n-Si has been presented. The ZnSe thin films were deposited onto the n-Si substrate by thermal evaporation technique. The X-ray diffraction (XRD) studies revealed the nanocrystalline nature of ZnSe thin films with prominent (111) orientations. The gamma irradiated samples displayed no crystallographic phase transformation up to 10 kGy irradiation doses. But noticeable and inconsistent modifications in the different lattice parameters were observed due to irradiation-induced effects. From the analysis of I-V characteristics, it has been found a similar trend in the variation of lattice mismatch, Schottky barrier height and interface trap parameter at different irradiation doses. Thus demonstrating the poor rectification properties of n-ZnSe/n-Si IHJs due to intrinsic and gamma-induced defects, and their role in the space charge limited conduction (SCLC) mechanism that significantly dominating over the thermionic emission (TE) mechanism across the barrier.