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Research Article
Bablu K. Ghosh
Universiti Malaysia Sabah
Corresponding Author
ORCiD: https://orcid.org/0000-0003-1457-3646
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CdTe thin film (TF) solar cells are most promising in commercial stage photovoltaic (PV) technologies. Cell contacts and interface defects related opto-electrical losses are still vital to limit its further technological benefit. Thin film PV cells shallow recombination and parasitic loss lessening purpose carrier selective back contact selection with band matching interface layers are essential. Beside that layer thickness selection is vital for field assisted selective carrier collection. The suitable emitter and buffer layer selection with band gap matching to the active layer can lessen parasitic absorption loss. In this purpose SCAPS software based ZnO and SnO2 TCO as well as CdS and CdSe buffer impact are numerically analyzed. The TCO, emitter, back surface field and metal contacts effects on electrical performance is studied. In the model, TCO and back contact barrier thickness is shown significant to progress electrical performance. Eventually, open circuit voltage Voc = 0.9757 V and 19.92% efficiency is achieved for 90 nm of ZnTe BSF with ZnO TCO and CdS emitter layer of optimized thickness.
Keywords
CdTe, TCO, ZnO, SnO2, back surface field, open circuit voltage, efficiency
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This is a preprint, a preliminary version of a manuscript that has not completed peer review at a journal. Research Square does not conduct peer review prior to posting preprints. The posting of a preprint on this server should not be interpreted as an endorsement of its validity or suitability for dissemination as established information or for guiding clinical practice.
Research Article
Bablu K. Ghosh
Universiti Malaysia Sabah
Corresponding Author
ORCiD: https://orcid.org/0000-0003-1457-3646
Badges
Prescreen
This manuscript passed our Prescreen assessment
Complete author information
Appropriate declaration statements
Potential risks to human health
Prescreen
History
CURRENT STATUS: Posted
The most recent version of this article is available here.
No community comments so far
Version 1
Posted 11 Mar, 2021
No comments provided
Metrics
Comments: 0
PDF Downloads: ...
HTML Views: ...
Subject Areas
Electrical Engineering
License:
This work is licensed under a CC BY 4.0 License. Read Full License
The most recent version of this article is available here.
CdTe thin film (TF) solar cells are most promising in commercial stage photovoltaic (PV) technologies. Cell contacts and interface defects related opto-electrical losses are still vital to limit its further technological benefit. Thin film PV cells shallow recombination and parasitic loss lessening purpose carrier selective back contact selection with band matching interface layers are essential. Beside that layer thickness selection is vital for field assisted selective carrier collection. The suitable emitter and buffer layer selection with band gap matching to the active layer can lessen parasitic absorption loss. In this purpose SCAPS software based ZnO and SnO2 TCO as well as CdS and CdSe buffer impact are numerically analyzed. The TCO, emitter, back surface field and metal contacts effects on electrical performance is studied. In the model, TCO and back contact barrier thickness is shown significant to progress electrical performance. Eventually, open circuit voltage Voc = 0.9757 V and 19.92% efficiency is achieved for 90 nm of ZnTe BSF with ZnO TCO and CdS emitter layer of optimized thickness.
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
This is a list of supplementary files associated with this preprint. Click to download.
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