TiOx-bsed resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95 % in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.
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No competing interests reported.
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Posted 03 Mar, 2021
On 18 Mar, 2021
Received 11 Mar, 2021
Received 11 Mar, 2021
Received 11 Mar, 2021
Received 11 Mar, 2021
On 05 Mar, 2021
On 05 Mar, 2021
On 05 Mar, 2021
On 05 Mar, 2021
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On 05 Mar, 2021
Invitations sent on 02 Mar, 2021
On 26 Feb, 2021
On 26 Feb, 2021
On 26 Feb, 2021
On 25 Feb, 2021
Posted 03 Mar, 2021
On 18 Mar, 2021
Received 11 Mar, 2021
Received 11 Mar, 2021
Received 11 Mar, 2021
Received 11 Mar, 2021
On 05 Mar, 2021
On 05 Mar, 2021
On 05 Mar, 2021
On 05 Mar, 2021
On 05 Mar, 2021
On 05 Mar, 2021
On 05 Mar, 2021
Invitations sent on 02 Mar, 2021
On 26 Feb, 2021
On 26 Feb, 2021
On 26 Feb, 2021
On 25 Feb, 2021
TiOx-bsed resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95 % in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
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