Glancing angle deposition technique was used to fabricate Ag nanoparticles (NPs) capped TiO2 Nanowire (NW) array structure for capacitive memory application. Electron microscopes confirmed the sandwiched structure of Ag NPs between TiO2 thin-film (TF) and NW. The average length of the vertical TiO2 NW and diameter of Ag NPs (with density ~1012 cm2) were found to be ~ 350 nm ±5 nm and ~3.2 nm ± 0.4 nm, respectively. An enhanced photoluminescence was observed in case of Ag NPs capped TiO2 NWs due to the presence of high carriers as compared to bare TiO2 NW. The capacitance (C) - voltage (V) hysteresis was measured for both Ag NPs capped TiO2 NW and bare TiO2 NW at different sweeping voltage (±3V to ±10 V) at 1 MHz frequency. A high capacitive memory window of 7.12 V was obtained for Ag NP capped TiO2 NW at ±10 V with an excellent endurance upto 1000 cycle. Significantly lesser charge loss of 23% was obtained after a span of 104 s with a hole and electron loss of 10.6% and 17.8% respectively. The program and erase process in the device was explained with the help of a band diagram.