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Research Article
Wanjun Chen
University of Electronic Science and Technology of China
Corresponding Author
ORCiD: https://orcid.org/0000-0002-8398-4548
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A novel superjunction MOSFET (SJ-MOSFET) for ultralow reverse recovery charge (Q RR ) and low switching loss is proposed and investigated. This device features a P-type Schottky diode and a source field-plate. The P-type Schottky diode consists of Schottky contact and P-base, which is reverse series-connected with body P-N junction diode. And the source field-plate is formed by implementing a polysilicon field-plate electrically coupled to the source, which is on the top of N-pillar. During the reverse conduction state, the P-type Schottky diode is reverse biased, which dramatically suppresses minority carriers injecting into the drift region. Simultaneously, electron accumulation layer formed under the source field-plate, which provides a path for the reverse current. Consequently, compared with the conventional SJ-MOSFET (Conv-SJ-MOSFET), the proposed SJ-MOSFET achieves an 84.0% lower Q RR with almost no sacrifice in other characteristics. Moreover, the proposed device also exhibits 47.4% and 66.0% lower gate charge (Q G ) and gate to drain charge (Q GD ), respectively. The significantly reduced Q G , Q GD , and Q RR contribute to an overall improvement in switching losses and resultant over 54.8% decrease in total power losses with operation frequency higher than 50 kHz, demonstrating great potential of the proposed SJ-MOSFET used in power conversion systems.
Keywords
MOSFET, superjunction (SJ), reverse recovery, Schottky contact, field-plate
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This is a preprint, a preliminary version of a manuscript that has not completed peer review at a journal. Research Square does not conduct peer review prior to posting preprints. The posting of a preprint on this server should not be interpreted as an endorsement of its validity or suitability for dissemination as established information or for guiding clinical practice.
Research Article
Wanjun Chen
University of Electronic Science and Technology of China
Corresponding Author
ORCiD: https://orcid.org/0000-0002-8398-4548
Badges
Prescreen
This manuscript passed our Prescreen assessment
Complete author information
Appropriate declaration statements
Potential risks to human health
Prescreen
History
CURRENT STATUS: Posted
Version 1
Posted 30 Mar, 2021
No community comments so far
Metrics
Comments: 0
PDF Downloads: ...
HTML Views: ...
Subject Areas
Computer Architecture and Engineering
License:
This work is licensed under a CC BY 4.0 License. Read Full License
A novel superjunction MOSFET (SJ-MOSFET) for ultralow reverse recovery charge (Q RR ) and low switching loss is proposed and investigated. This device features a P-type Schottky diode and a source field-plate. The P-type Schottky diode consists of Schottky contact and P-base, which is reverse series-connected with body P-N junction diode. And the source field-plate is formed by implementing a polysilicon field-plate electrically coupled to the source, which is on the top of N-pillar. During the reverse conduction state, the P-type Schottky diode is reverse biased, which dramatically suppresses minority carriers injecting into the drift region. Simultaneously, electron accumulation layer formed under the source field-plate, which provides a path for the reverse current. Consequently, compared with the conventional SJ-MOSFET (Conv-SJ-MOSFET), the proposed SJ-MOSFET achieves an 84.0% lower Q RR with almost no sacrifice in other characteristics. Moreover, the proposed device also exhibits 47.4% and 66.0% lower gate charge (Q G ) and gate to drain charge (Q GD ), respectively. The significantly reduced Q G , Q GD , and Q RR contribute to an overall improvement in switching losses and resultant over 54.8% decrease in total power losses with operation frequency higher than 50 kHz, demonstrating great potential of the proposed SJ-MOSFET used in power conversion systems.
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
The full text of this article is available to read as a PDF.
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