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Research Article
Malek GASSOUMI
Institut National des Sciences Appliquees de Lyon
Corresponding Author
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AlGaN/GaN HEMTs grown on high resistive silicon (111) substrate grown by molecular beam epitaxy have been investigated using impedance measurements. Passivation of the HEMT devices is made in order to improve the electron transport. As has been found from conductance data, the electron traps are eliminated after passivation. The impedance spectroscopy has been, on the other hand, studied from the electrical transport. As a result, a complex impedance plot was revealed an equivalent circuit models indicating single semicircles and the solid interface.
Keywords
AlGaN/GaN/Si HEMTs, impedance spectroscopy, conductance, passivation, electron traps.
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CURRENT STATUS: Under Review
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Posted 19 Apr, 2021
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On 05 May, 2021
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A new preprint design is coming!
We have improved readability, clarity, accessibility, and opportunities for engagement.
This preprint is under consideration at Silicon. A preprint is a preliminary version of a manuscript that has not completed peer review at a journal. Research Square does not conduct peer review prior to posting preprints. The posting of a preprint on this server should not be interpreted as an endorsement of its validity or suitability for dissemination as established information or for guiding clinical practice.
Learn more about In Review
Research Article
Malek GASSOUMI
Institut National des Sciences Appliquees de Lyon
Corresponding Author
Badges
Prescreen
This manuscript passed our Prescreen assessment
Complete author information
Appropriate declaration statements
Potential risks to human health
Prescreen
Peer Review Timeline
CURRENT STATUS: Under Review
Version 1
Posted 19 Apr, 2021
No community comments so far
Editorial decision: Minor revisions
On 05 May, 2021
Reviewers invited
Invitations sent on 14 Apr, 2021
Reviews received
Received 14 Apr, 2021
Editor invited
On 12 Apr, 2021
First submitted
On 02 Apr, 2021
Metrics
Comments: 0
PDF Downloads: ...
HTML Views: ...
License:
This work is licensed under a CC BY 4.0 License. Read Full License
AlGaN/GaN HEMTs grown on high resistive silicon (111) substrate grown by molecular beam epitaxy have been investigated using impedance measurements. Passivation of the HEMT devices is made in order to improve the electron transport. As has been found from conductance data, the electron traps are eliminated after passivation. The impedance spectroscopy has been, on the other hand, studied from the electrical transport. As a result, a complex impedance plot was revealed an equivalent circuit models indicating single semicircles and the solid interface.
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
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