A novel model in the theory of photo-thermoelasticity with microstretch properties is studied. The plasma-elastic-thermal plane waves are propagated in a linear isotropic generalized photo-thermo-microstretch elastic semiconductor solid medium. The photothermal excitation occurs in the context of the microinertia of microelement process during two dimensions (2D) deformation. The harmonic wave techniques are used to get the solutions for the basic variables. The analytical solution of the main physical fields; carrier intensity, normal displacement components, temperature, stress load force, microstress and tangential coupled stress can be obtained. Some graphics illustrated when using the plasma, thermal and mechanical load boundary conditions, which they apply at the outer free surface of the elastic medium. Some semiconductor materials as silicon (Si) and Germanium (Ge) are used to make the numerical simulation and some comparisons in different thermal memories are made. The main physical variables with new parameters are discussed theoretically and shown graphically.

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Posted 16 Apr, 2021
On 16 May, 2021
Invitations sent on 07 Apr, 2021
On 07 Apr, 2021
Received 07 Apr, 2021
On 03 Apr, 2021
Posted 16 Apr, 2021
On 16 May, 2021
Invitations sent on 07 Apr, 2021
On 07 Apr, 2021
Received 07 Apr, 2021
On 03 Apr, 2021
A novel model in the theory of photo-thermoelasticity with microstretch properties is studied. The plasma-elastic-thermal plane waves are propagated in a linear isotropic generalized photo-thermo-microstretch elastic semiconductor solid medium. The photothermal excitation occurs in the context of the microinertia of microelement process during two dimensions (2D) deformation. The harmonic wave techniques are used to get the solutions for the basic variables. The analytical solution of the main physical fields; carrier intensity, normal displacement components, temperature, stress load force, microstress and tangential coupled stress can be obtained. Some graphics illustrated when using the plasma, thermal and mechanical load boundary conditions, which they apply at the outer free surface of the elastic medium. Some semiconductor materials as silicon (Si) and Germanium (Ge) are used to make the numerical simulation and some comparisons in different thermal memories are made. The main physical variables with new parameters are discussed theoretically and shown graphically.

Figure 1

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Figure 8

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Figure 10

Figure 11

Figure 12

Figure 13

Figure 14

Figure 15

Figure 16

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Figure 18

Figure 19

Figure 20

Figure 21

Figure 22
The full text of this article is available to read as a PDF.
This is a list of supplementary files associated with this preprint. Click to download.
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