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Research Article
khaled lotfy
Zagazig University Faculty of Science
Corresponding Author
ORCiD: https://orcid.org/0000-0001-9383-1361
License:
This work is licensed under a CC BY 4.0 License. Read Full License
A mathematical novel model for elastic semiconductor medium with microstretch properties is investigated. The generalized model is studied in the context of photo-thermoelasticity theory when the semiconductor medium is excited. The governing equations describe the coupled between the propagation of the elastic-thermal-plasma waves when the thermo-microstretch elastic semiconductor material is studied during a rotation field. The linear medium has an isotropic properties. The photothermal transport processes occurs during a two dimension (2D) elastic and electronic deformation when the microinertia of microelement is taken into account. The harmonic wave method can be used to obtain the general solutions for the basic physical variables. The complete analytical solutions of the considered variables are obtained when some mechanical-thermal and plasma conditions are applied on the boundary of the semiconductor medium. The numerical simulations of silicon (Si) and Germanium (Ge) media are constructed graphically with many comparisons according to a new parameters with thermal memories and rotation parameter.
Keywords
Photo-thermoelasticity theory, Semiconductor, Rotation, Microstretch, Microinertia, Harmonic wave
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CURRENT STATUS: Under Review
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Posted 25 May, 2021
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This preprint is under consideration at Optical and Quantum Electronics. A preprint is a preliminary version of a manuscript that has not completed peer review at a journal. Research Square does not conduct peer review prior to posting preprints. The posting of a preprint on this server should not be interpreted as an endorsement of its validity or suitability for dissemination as established information or for guiding clinical practice.
Learn more about In Review
Research Article
khaled lotfy
Zagazig University Faculty of Science
Corresponding Author
ORCiD: https://orcid.org/0000-0001-9383-1361
Badges
Prescreen
This manuscript passed our Prescreen assessment
Complete author information
Appropriate declaration statements
Potential risks to human health
Prescreen
Peer Review Timeline
CURRENT STATUS: Under Review
Version 1
Posted 25 May, 2021
No community comments so far
Reviewers invited
Invitations sent on 09 Aug, 2021
Reviews received
Received 23 May, 2021
Editor invited
On 10 Apr, 2021
First submitted
On 04 Apr, 2021
Metrics
Comments: 0
PDF Downloads: ...
HTML Views: ...
License:
This work is licensed under a CC BY 4.0 License. Read Full License
A mathematical novel model for elastic semiconductor medium with microstretch properties is investigated. The generalized model is studied in the context of photo-thermoelasticity theory when the semiconductor medium is excited. The governing equations describe the coupled between the propagation of the elastic-thermal-plasma waves when the thermo-microstretch elastic semiconductor material is studied during a rotation field. The linear medium has an isotropic properties. The photothermal transport processes occurs during a two dimension (2D) elastic and electronic deformation when the microinertia of microelement is taken into account. The harmonic wave method can be used to obtain the general solutions for the basic physical variables. The complete analytical solutions of the considered variables are obtained when some mechanical-thermal and plasma conditions are applied on the boundary of the semiconductor medium. The numerical simulations of silicon (Si) and Germanium (Ge) media are constructed graphically with many comparisons according to a new parameters with thermal memories and rotation parameter.
Figure 1
Figure 2
Figure 3
Figure 4
The full text of this article is available to read as a PDF.
This is a list of supplementary files associated with this preprint. Click to download.
- Geometryoftheproblem.png
Geometry of the problem
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