A mathematical novel model for elastic semiconductor medium with microstretch properties is investigated. The generalized model is studied in the context of photo-thermoelasticity theory when the semiconductor medium is excited. The governing equations describe the coupled between the propagation of the elastic-thermal-plasma waves when the thermo-microstretch elastic semiconductor material is studied during a rotation field. The linear medium has an isotropic properties. The photothermal transport processes occurs during a two dimension (2D) elastic and electronic deformation when the microinertia of microelement is taken into account. The harmonic wave method can be used to obtain the general solutions for the basic physical variables. The complete analytical solutions of the considered variables are obtained when some mechanical-thermal and plasma conditions are applied on the boundary of the semiconductor medium. The numerical simulations of silicon (Si) and Germanium (Ge) media are constructed graphically with many comparisons according to a new parameters with thermal memories and rotation parameter.