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Research Article
Subba Rao Suddapalli
National Institute of Technology Warangal
Corresponding Author
ORCiD: https://orcid.org/0000-0002-3191-0731
License:
This work is licensed under a CC BY 4.0 License. Read Full License
In this paper, variability analysis of graded channel dual material (GCDM) double gate (DG) strained-silicon (s-Si) MOSFET with fixed charges is analyzed with the help of Sentaurus TCAD. By varying the different device parameters, the variability analysis of the proposed GCDM-DG s-Si MOSFET is performed with respect to variations in threshold voltage and drain current as the line edge roughness and fluctuations in random dopant, contact resistance, and oxide thickness are considered. The results confirm that the effect of process variations is severe when the device has fixed charges at oxide interface. Moreover, the proposed GCDM-DG s-Si p-MOSFET has less vulnerable to the effects of line edge roughness, fluctuations in oxide thickness and random dopants in comparison with the proposed GCDM-DG s-Si n-MOSFET.
Keywords
Contact resistance fluctuations, Line edge roughness, Oxide thickness fluctuations, Random dopant fluctuations, Strained-Silicon, Threshold voltage
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CURRENT STATUS: Published
View the published article at Journal of Computational Electronics.
Version 1
Posted 16 Apr, 2021
No community comments so far
Reviews received
Received 10 Apr, 2021
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On 09 Apr, 2021
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See the published version of this preprint at Journal of Computational Electronics.
This is a preprint, a preliminary version of a manuscript that has not completed peer review at a journal. Research Square does not conduct peer review prior to posting preprints. The posting of a preprint on this server should not be interpreted as an endorsement of its validity or suitability for dissemination as established information or for guiding clinical practice.
Learn more about In Review
Research Article
Subba Rao Suddapalli
National Institute of Technology Warangal
Corresponding Author
ORCiD: https://orcid.org/0000-0002-3191-0731
Badges
Prescreen
This manuscript passed our Prescreen assessment
Complete author information
Appropriate declaration statements
Potential risks to human health
Prescreen
Peer Review Timeline
CURRENT STATUS: Published
View the published article at Journal of Computational Electronics.
Version 1
Posted 16 Apr, 2021
No community comments so far
Reviews received
Received 10 Apr, 2021
Reviewers invited
Invitations sent on 10 Apr, 2021
Editor invited
On 09 Apr, 2021
First submitted
On 06 Apr, 2021
Metrics
Comments: 0
PDF Downloads: ...
HTML Views: ...
License:
This work is licensed under a CC BY 4.0 License. Read Full License
View the published article at Journal of Computational Electronics.
In this paper, variability analysis of graded channel dual material (GCDM) double gate (DG) strained-silicon (s-Si) MOSFET with fixed charges is analyzed with the help of Sentaurus TCAD. By varying the different device parameters, the variability analysis of the proposed GCDM-DG s-Si MOSFET is performed with respect to variations in threshold voltage and drain current as the line edge roughness and fluctuations in random dopant, contact resistance, and oxide thickness are considered. The results confirm that the effect of process variations is severe when the device has fixed charges at oxide interface. Moreover, the proposed GCDM-DG s-Si p-MOSFET has less vulnerable to the effects of line edge roughness, fluctuations in oxide thickness and random dopants in comparison with the proposed GCDM-DG s-Si n-MOSFET.
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
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