Recent Advancements in the wireless communication systems utilizes miniaturized devices based on Micro – Electro – Mechanical System technology for present and future 5G wireless applications. Now a days, RF devices are utilizing the frequencies upto 30 GHz and a huge traffic in signal propagation occurs which leads to the slow data rate. In other hand, there is a huge spectrum available in the millimetre wave frequency range of 30 – 300 GHz. The millimetre wave spectrum is attractive for development of smart systems based on 5G technology. In this paper, A low pull – in voltage capacitive type RF MEMS switch is proposed to operate at the frequencies above 30 GHz. The switch is proposed with new iterative meandering technique where span length of each section in meanders differs and dependable with first section. A low pull – in voltage of 1.8V is achieved with large capacitance ratio of 63. The switch exhibits low insertion loss of -0.24 dB at 41 GHz and possess high isolation of -46.7 dB at 38 GHz. The design is validated by comparing the theoretical and simulated results and the switch can be efficiently utilized for millimeterwave applications.