This paper presents a numerically simulated Ge-source based Tunnel Field Effect Transistor with (TFETs) SiO 2 segregation between the channel and drain. The developed device has been compared with conventional TFET and without isolated heterojunction TFET. The use of oxide segregation between channel and drain enhances the performance of the device in terms of ON-state current as well as subthreshold swing (SS). The electrical characteristics such as surface potential, electric field, transfer characteristics, output characteristics of the proposed device have been studied. The temperature variation of the proposed device has also been studied. The proposed device offers high ON current of 3x10 4 A, I ON /I OFF ratio of ~10 11, and enhanced SS of 30 mV/dec. The validity of the proposed device has been done by Synopsys Sentaurus TCAD.