The high conductivity, lightness and flexibility of conducting electronic textiles in a wide range of applications is drawing increasing attention. This work uses a simple drop casting method to fabricate conductive cotton fabrics with low sheet resistance using multi walled carbon nanotubes (MWCNTs), poly (3,4 ethylenedioxy thiophene) poly(styrenesulfonate) (PEDOT:PSS), and a mixture of both. Low sheet resistances of 16.39 Ω/□, 5.49 Ω/□ and 2.86 Ω/□ were achieved by the concentrations of 41.50 wt.% MWCNTs, 28.51 wt.% PEDOT:PSS and 60.27 wt.% MWCNTs/PEDOT:PSS respectively. Furthermore, the temperature dependent behavior of PEDOT:PSS treated cotton fabric showed both semiconductor and metal behavior that was dependent on the concentration of PEDOT:PSS. By contrast, temperature studies of MWCNTs treated cotton fabric showed only semiconductor behavior. Moreover, MWCNTs/PEDOT:PSS cotton fabrics exhibited semiconductor behavior alone due to the effect of MWCNT particles. In addition, the conductive cottons are easy to make, are safe and low cost which indicates making them a promising electronic textile for applications in the future.