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Research Article
Resistive switching and optical properties of strontium ferrate titanate thin film prepared via chemical solution deposition
Jun Li
Guangdong University of Technology
Corresponding Author
ORCiD: https://orcid.org/0000-0002-3039-1124
License:
This work is licensed under a CC BY 4.0 License. Read Full License
The polycrystalline strontium ferrate titanate (SrFe0.1Ti0.9O3, abbreviated to SFTO) thin films have been successfully prepared by chemical solution method. By analyzing the current-voltage (I-V) characteristics, we discuss the conduction mechanism of SFTO. It is found that the number of oxygen vacancy defects is increased by Fe ions doping, making SFTO be with better resistive switching property. Fe ions doping can also enhance the absorption of strontium titanate to be exposed to visible light, which is associated with the change of energy band. The band gap width (2.84 eV) of SFTO films is figured out, which is less than that of pure strontium titanate. Due to more oxygen vacancy defects caused by Fe ions doping, the band gap width of strontium titanate was reduced slightly. The defect types of SFTO thin films can be determined by electron paramagnetic resonance spectroscopy. In addition, we analyzed the energy band and state density of SFTO by first-principle calculation based on density functional theory, and found that Fe ions doping can reduce the band gap width of strontium titanate with micro-regulation on the band structure. A chemical state of SFTO was analyzed by X-ray photo electron spectroscopy. At the same time, the structure and morphology of SFTO were characterized by X-ray diffraction and scanning electron microscope. This study deepened the understanding of the influence of Fe ions doping on the structure and properties of strontium ferrate titanate, which is expected to be a functional thin film material for memristor devices.
Keywords
SrTiO3, thin films, resistive switching, oxygen vacancy, first principles
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This preprint is under consideration at Journal of Advanced Ceramics. A preprint is a preliminary version of a manuscript that has not completed peer review at a journal. Research Square does not conduct peer review prior to posting preprints. The posting of a preprint on this server should not be interpreted as an endorsement of its validity or suitability for dissemination as established information or for guiding clinical practice.
Learn more about In Review
Research Article
Resistive switching and optical properties of strontium ferrate titanate thin film prepared via chemical solution deposition
Jun Li
Guangdong University of Technology
Corresponding Author
ORCiD: https://orcid.org/0000-0002-3039-1124
Badges
Prescreen
This manuscript passed our Prescreen assessment
Complete author information
Appropriate declaration statements
Potential risks to human health
Prescreen
Peer Review Timeline
CURRENT STATUS: Under Review
Version 1
Posted 21 Sep, 2020
No community comments so far
Review #4 received
Received 16 Nov, 2020
Editorial decision: Minor revisions
On 16 Nov, 2020
Review #3 received
Received 12 Nov, 2020
Review #2 received
Received 10 Nov, 2020
Reviewer #4 agreed
On 03 Nov, 2020
Reviewer #3 agreed
On 31 Oct, 2020
Reviewer #2 agreed
On 30 Oct, 2020
Review #1 received
Received 20 Oct, 2020
Reviewer #1 agreed
On 05 Oct, 2020
Reviewers invited
Invitations sent on 01 Oct, 2020
Editor assigned
On 18 Sep, 2020
First submitted
On 17 Sep, 2020
Submission checks complete
On 17 Sep, 2020
Editor invited
On 17 Sep, 2020
Metrics
Comments: 0
PDF Downloads: ...
HTML Views: ...
Subject Areas
Ceramics
License:
This work is licensed under a CC BY 4.0 License. Read Full License
The polycrystalline strontium ferrate titanate (SrFe0.1Ti0.9O3, abbreviated to SFTO) thin films have been successfully prepared by chemical solution method. By analyzing the current-voltage (I-V) characteristics, we discuss the conduction mechanism of SFTO. It is found that the number of oxygen vacancy defects is increased by Fe ions doping, making SFTO be with better resistive switching property. Fe ions doping can also enhance the absorption of strontium titanate to be exposed to visible light, which is associated with the change of energy band. The band gap width (2.84 eV) of SFTO films is figured out, which is less than that of pure strontium titanate. Due to more oxygen vacancy defects caused by Fe ions doping, the band gap width of strontium titanate was reduced slightly. The defect types of SFTO thin films can be determined by electron paramagnetic resonance spectroscopy. In addition, we analyzed the energy band and state density of SFTO by first-principle calculation based on density functional theory, and found that Fe ions doping can reduce the band gap width of strontium titanate with micro-regulation on the band structure. A chemical state of SFTO was analyzed by X-ray photo electron spectroscopy. At the same time, the structure and morphology of SFTO were characterized by X-ray diffraction and scanning electron microscope. This study deepened the understanding of the influence of Fe ions doping on the structure and properties of strontium ferrate titanate, which is expected to be a functional thin film material for memristor devices.
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