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Technical Report
A method of Ga removal from a specimen fabricated on MEMS-based chip for in-situ transmission electron microscopy
Cheol-Woong Yang
Sungkyunkwan University
Corresponding Author
ORCiD: https://orcid.org/0000-0003-0475-8399
License:
This work is licensed under a CC BY 4.0 License. Read Full License
View the published version at Applied Microscopy.
In-situ transmission electron microscopy (TEM) holders, which are widely used in recent years, employ a chip-type specimen stage. To prepare the specimen on the microelectromechanical system (MEMS)-based chip, focused ion beam (FIB) and ex-situ lift-out (EXLO) techniques has been widely used. However, thin foil specimens prepared using the FIB inevitably contain the contamination induced by Ga+ ions. In particular, when the specimen is heated for real time observation, it is observed that Ga+ ions influence the reaction or aggregate in the protection layer. An effective method of removing the Ga residue is demonstrated using Ar+ ion milling within FIB. In the case of lifting the thin foil specimen from the trench by the EXLO technique, Ga still remained even if Ar+ ion milling was conducted. To avoid this problem, the thin foil specimen was attached to FIB lift-out grid, performing Ar+ ion milling, and then transferred to a MEMS chip using EXLO technique. The removal of the Ga residue was confirmed using energy dispersive spectroscopy (EDS).
Keywords
Focused ion beam (FIB), ex-situ lift-out (EXLO) system, Ga residue, MEMS-based chip, Ar+ ion milling
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On 20 Sep, 2020
Reviewer #2 agreed
On 20 Sep, 2020
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This preprint is under consideration at Applied Microscopy. A preprint is a preliminary version of a manuscript that has not completed peer review at a journal. Research Square does not conduct peer review prior to posting preprints. The posting of a preprint on this server should not be interpreted as an endorsement of its validity or suitability for dissemination as established information or for guiding clinical practice.
Learn more about In Review
Technical Report
A method of Ga removal from a specimen fabricated on MEMS-based chip for in-situ transmission electron microscopy
Cheol-Woong Yang
Sungkyunkwan University
Corresponding Author
ORCiD: https://orcid.org/0000-0003-0475-8399
Badges
Prescreen
This manuscript passed our Prescreen assessment
Complete author information
Appropriate declaration statements
Potential risks to human health
Prescreen
Peer Review Timeline
CURRENT STATUS: Published
Version 1
Posted 21 Sep, 2020
Published
On 14 Oct, 2020
Published
On 14 Oct, 2020
No community comments so far
Editorial decision: Minor revision
On 24 Sep, 2020
Review #1 received
Received 21 Sep, 2020
Review #2 received
Received 21 Sep, 2020
Reviewer #1 agreed
On 20 Sep, 2020
Reviewer #2 agreed
On 20 Sep, 2020
Reviewers invited
Invitations sent on 18 Sep, 2020
First submitted
On 17 Sep, 2020
Editor assigned
On 17 Sep, 2020
Submission checks complete
On 16 Sep, 2020
Editor invited
On 16 Sep, 2020
Metrics
Comments: 0
PDF Downloads: ...
HTML Views: ...
Subject Areas
Applied & Industrial Microbiology
License:
This work is licensed under a CC BY 4.0 License. Read Full License
View the published version at Applied Microscopy.
In-situ transmission electron microscopy (TEM) holders, which are widely used in recent years, employ a chip-type specimen stage. To prepare the specimen on the microelectromechanical system (MEMS)-based chip, focused ion beam (FIB) and ex-situ lift-out (EXLO) techniques has been widely used. However, thin foil specimens prepared using the FIB inevitably contain the contamination induced by Ga+ ions. In particular, when the specimen is heated for real time observation, it is observed that Ga+ ions influence the reaction or aggregate in the protection layer. An effective method of removing the Ga residue is demonstrated using Ar+ ion milling within FIB. In the case of lifting the thin foil specimen from the trench by the EXLO technique, Ga still remained even if Ar+ ion milling was conducted. To avoid this problem, the thin foil specimen was attached to FIB lift-out grid, performing Ar+ ion milling, and then transferred to a MEMS chip using EXLO technique. The removal of the Ga residue was confirmed using energy dispersive spectroscopy (EDS).
Figure 1
Figure 2
Figure 3
Figure 4