The formation of a scratch is governed by the nature and live state of the SLS glass surface just before the event of scratching. The structural orientation of the silicate network plays a crucial role in addition to the distribution of network modifiers – governing the integrity of the surface required for absorption and dissipation of a dynamically applied load. If the externally applied force (sheer stress) is opposed by the glass surface instead of dissipating it to a larger area (wide scratch) in the neighboring vicinity of the position of the application of load, the appearance of a scratch is thought to be relatively more abrupt, dictated by the sheer dominance of the surface. A harder surface is thus likely to oppose the applied load more effectively (lower scratch depth) than a relatively softer counterpart, to promote the instigation of higher stress concentration within a smaller confined volumetric zone. This is proposed to lead to better visibility and prominence of a formed scratch on a harder surface, which succeeds the context of current discussion.
Figure 1(a) portrays the two-dimensional SEM, three-dimensional LSM and differential interference contrast (DIC) images of a particular scratch generated at a load of 5 N on the surface of an untreated soda-lime-silica glass sample. Figure 1(b) represents the SEM, LSM and DIC images of a scratch formed at the same load of 5 N on an SLS glass surface, heat-treated close to Tg at 510 ºC for 30 minutes. It is clearly visible that the scratch on the heat-treated surface is more concentrated within a confined region with high volume of material pile-up (chipping), leading to higher prominence of its visibility in comparison to the untreated counterpart, which seems to be dissipated to a larger width with scattered debris. This may be attributed to higher hardness of the heat-treated specimen up to a depth of about 300 nm relative to the untreated specimen as observed by instrumented indentation as a function of depth from the glass surface, illustrated in Fig. 2(a). The corresponding load-discplacement curves shown in Fig. 2(b) illustrate the loading cycle and unloading cycle – representative of the behaviour of the glass network during penetration of the Vickers indenter. The lower depth of maximum penetration (hmax) of H510 surface at the same load of 10 mN relative to the untreated surface is accountable for its higher Martens hardness. The comparative structural network connectivity confined within the region of 5 nm to 100 nm is experimentally obtained by XPS O1s studies – discussed in the next section. It is essential to point out that we did not observe any distinguishable difference in hardness between the heat-treated and untreated specimens at loads greater than 10 mN – corresponding to higher depths of penetration over 300 nm (bulk). The scientific reason in terms of structural modification for a 10%-enhancement in surface hardness of a sub-Tg heat-treated specimen, may be hypothesized as the repolymerization of NBOs of vicinal silanols in the inner skin (marked as layer ‘2’ in Fig. 3) into “mechanically stronger” Q4 units with four BOs, leading to a quartz-like strengthened skeletal network up to a certain shallow depth below the glass surface of the order of few nanometers, as experimentally evidenced by Banerjee et. al. by XPS studies in the top 10 nm [26]. This is schematically illustrated in Fig. 3 with typical comparative surface structures of untreated and heat-treated SLS glass.
Figure 1. SEM, DIC and LSM (projected) images of scratch generated at 5 N on (a) untreated (b) heat-treated (510°C, 30 minutes) SLS glass surface.
Figure 2. (a) Comparative illustration of variation of hardness as a function of depth from the untreated and heat-treated SLS glass surfaces. The indentation size effect (ISE) due to dislocation strengthening necessary to accommodate plastic deformation, in addition to friction between the indenter and specimen surface [36, 37], may not be neglected at shallow depths below 100 nm. The Martens hardness in the ordinate (y-axis) contains an axis-break up to 3900 N/mm2. (b) Corresponding load-displacement curves illustrating the loading cycle (AB: untreated and AB’: H510) and unloading cycle representative of elastic recovery (BC: untreated and B’C’: H510). The serration observed in the unloading cycle (B’C’) of H510 specimen is a reflection of local relaxation processes during elastic recovery, which is predominantly more active during the unloading process than during loading [38].
Figure 3. Typical surface structural schematics of SLS glass (a) untreated (b) heat-treated at 510°C for 30 minutes. The surface OH groups pertaining to physisorbed and chemisorbed water molecules in the outer skin (layer 1) were assigned by ATR-IR signals. The inner skin (layer 2) containing vicinal silanol groups are speculated to repolymerize into Q4 units during sub-Tg heat-treatment [26] to harden the glass surface. The depth of the SiO2-rich glass skin (exchanged layer) is in the order of few nanometers, which depends on thermal history and atmospheric storage history, among other surface-influential factors.
3.1 Investigation of silicate structure by X-ray photoelectron spectroscopy (~ 0-100 nm)
X-ray photoelectron spectroscopy (XPS) is a very powerful surface-sensitive technique to determine the localized atomic bonding environments in addition to elemental depth profiling analysis in nanometer ranges of depth below the glass surface. At the beginning, an XPS measurement was performed on the top surface without any sputtering. The information obtained is confined within a depth of 5 nm corresponding to this measurement. Figure 4 portrays the XPS results of the surfaces of untreated and heat-treated specimens (before scratch test) in terms of O1s peak deconvolution, centered around their corresponding binding energies (assignment of spectral peak fits: [26, 27]). The O1s peak fittings were performed freely without any constraints in accordance with Nesbitt et. al. [27], to report the least squares best fits. The corresponding binding energies, FWHM and normalized integrated peak areas of the deconvoluted peaks are tabulated in Table 1. The comparative differences in concentrations of non-bridging and bridging oxygens substantiate a critical evidence of the orientation of the silicate structure (network connectivity) in addition to the distribution of network modifiers, which may govern the mechanistic driving force of the formation of a scratch on SLS glass surface. Figure 4(a) shows a comparative deconvoluted O1s illustration with respect to a clear distinction between untreated and heat-treated surfaces in terms of a noteworthy difference in concentration of BOs and NBOs corresponding to their respective binding energies, ensuing the subsequent illustration. The normalized integrated peak areas were used for quantitative computation of the concentration of bridging and non-bridging oxygens present on surfaces of both the specimens. The evaluated concentrations were comparatively plotted in Fig. 4(b). The presence of a relatively high concentration of bridging oxygens on the surface (within a depth of 5 nm) of the heat-treated specimen is clearly noticeable, which complements our hypothesis of a strengthened silicate network due to the presence of repolymerized Q4 units on a sub-Tg heat-treated surface, giving rise to higher (nano) hardness, as observed by instrumented indentation at a load of 10 mN. Moreover, the presence of relatively lower concentration of “mechanically weakening elements”, namely NBOs and SiOH/H2O species on an SLS surface heat-treated near Tg further justifies the network strengthening effect induced by the virtue of thermal treatment. Thus, a combination of high concentration of bridging oxygens and low population of mechanically weakening elements up to a depth of about 5 nm indicated a strong and rigid network possessed by the heat-treated surface; in other words, the surface porosity [28] was reduced by sub-Tg heat treatment.
The structural network connectivity was subsequently investigated as a function of depth from the glass surface (up to about 100 nm) by Ar+ sputtering. The heat-treated specimen seemed to attain a saturation between 3 and 3.5 in terms of the computed atomic ratio of total oxygen to silicon, OTotal/Si (dominated by the presence of Q1 and Q2 species), while the untreated counterpart saturated at a ratio close to 3, indicating a major dominance by a potentially high population of Q2 species – illustrated in Fig. 5. It is to be noted that the data point corresponding to “0 minutes” indicates a surface measurement without sputtering, the depth of information of which is confined within a depth of 5 nm below the surface. The H510 surface seemed to contain an abundance of free oxygen (O2-) indicated by a very high OTotal / Si ratio of 4.7. These free oxygens are thought to occupy the voids within the repolymerized Q4 units present on the heat-treated surface as hypothetically schematized in Fig. 3(b), in accordance with the XPS experimental results of a sub-Tg heat-treated surface by Banerjee et. al. [26]. We complement their findings by observing high concentration of free oxygens on the surface by our experimental investigations. Moreover, Nesbitt et. al. also reported the presence of free oxygens in the form of O2- on the glass surface by complementary XPS and NMR studies [27]. The charge neutrality is thought to be taken care of by the modifier cations. The second probable reason to account for an O/Si ratio greater than 4 – could be the presence of physisorbed or chemisorbed water adsorbed from the atmosphere before subjecting the heat-treated specimen to XPS analysis. It is noteworthy that the binding energy of the Na1s spectral line is close to 1075 eV, in contrast to a low binding energy of around 530 eV for O1s spectral line, which theoretically implies that the photoelectrons of Na1s and O1s are ejected from slightly different depths (of the order of probably a couple of nanometers, which may still not be neglected) corresponding to any data point of sputtering. Hence, we preferred to avoid a comparative analysis of Na1s and O1s orbitals. Nevertheless, the aforementioned findings clearly demonstrate that the surface of the H510 specimen up to about 5 nm was mechanically stronger than the untreated surface, while the reverse holds true for the depth range of around 5 nm to 100 nm (mechanically weaker). It is necessary to point out that although the atomic ratio of OTotal/Si corresponding to the data point of ‘0 minutes’ (surface measurement without sputtering) for the H510 surface is considerably high, it does not indicate a structurally weakened network due to compensation by high population of BOs as described earlier.
Assuming an estimated etching rate of around 1 nm/min with Ar+ sputtering – considering the report of Yamanaka et. al. (50 nm/hr.) with respect to XPS studies on float glass surface [29], it can be assumed that the information was obtained up to a depth of around 100 nm with 110 minutes of Ar+ sputtering at 5 kV, concerning the SLS glass used in this study. Although argon ion sputtering was reported to cause potential surface damage in terms of possible migration of mobile alkali ions in addition to possible surface modification by long duration XPS experiments [30, 31], it is still a widely used method for XPS depth profiling on glass surface and shouldn’t affect the analysis of O1s orbital presented in this work, pertaining to an experimental Ar+ sputtering time of less than 2 hours at 5 kV.
Figure 4. XPS results of untreated and heat-treated SLS surfaces (0–5 nm) (a) 100% Gaussian deconvolution of O1s orbital (b) Comparative illustration of distribution of bridging oxygens (BOs), non-bridging oxygens (NBOs) and SiOH/H2O species on both the surfaces.
Table 1
Binding energy, FWHM and % area of deconvoluted O1s peaks of untreated and heat-treated surfaces
Specimen | NBO | | | BO | | | SiOH/H2O | | |
| BE (eV) | FWHM (eV) | Area (%) | BE (eV) | FWHM (eV) | Area (%) | BE (eV) | FWHM (eV) | Area (%) |
H510 | 529.87 | 1.17 | 17.77 | 531.41 | 2.03 | 80 | 532.07 | 1.11 | 2.23 |
Untreated | 530.09 | 1.61 | 20.35 | 531.51 | 1.35 | 62.09 | 532.35 | 1.42 | 17.56 |
3.2 Investigation of silicate structure by Raman spectroscopy (~ 1–5 µm)
Having studied the interesting silicate structural changes in the nanometer range of depth below the glass surface by XPS, it was essential to investigate the silicate structure in micrometer ranges of depth (before scratch test), which can be conveniently probed by confocal Raman spectroscopy with a high-resolution z-scan through the depth. A depth resolution of approximately 1 µm was obtained with careful optimization of different optical parameters, while bearing in mind the index of refraction. The theoretical spatial (x-y) resolution was 500 nm with a laser spot diameter of 1 µm on the specimen surface. The high frequency (HF) broad band centred around 1090 cm-1 is commonly known to be attributed to the stretching vibrations of Q3 species [32–34]. The noteworthy finding of this study is the distribution of Raman shift of Q3 band with respect to scattering (shift) of its position with depth from the glass surface, micrometer by micrometer. The untreated specimen showed a widely scattered distribution of Q3 shift in comparison to the heat-treated specimen, when scanned up to 5 µm from the point of focus on the top surface f0 (penetration depth of 532-nm laser into silicon is reported to be 0.7 µm [35]). This is illustrated in Fig. 6; the scattering limit is indicated by the respective confined boundaries. The Raman shift of HF Q3 band was proposed to be a function of variation of Si-O-Si bond angle and Si-O bond length in different literatures concerned with ion-exchanged SLS glasses [33, 34]. However, the scattered distribution of the shift observed in this work is thought to qualitatively indicate a more pronounced variation of Si-O-Si bond angle with depth for the untreated specimen; probably indicating a relatively more stabilised silicate network (with respect to lower variation of bond angle) for the heat-treated specimen in the bulk (µm range), due to its limited Q3 shift with depth.
Depth Resolution ~ 1 µm.
The Raman spectra of the HF stretching band (850 cm-1 to 1250 cm-1), taken directly on the scratched grooves of both the specimen surfaces are shown in Fig. 7. Gaussian deconvolution was performed after necessary processing of the spectra to report the best generated fit of the overlapping peaks (R-square > 0.99), which were assigned to the stretching vibrations of Q1, Q2, Si-O, Q3 and Q4 species– corresponding to around 950 cm-1, 990 cm-1, 1040 cm-1, 1090 cm-1 and 1150 cm-1 respectively [33]. The surface scratch network on the untreated specimen seemed to contain more Q1 units (mechanically weakening entity), defined by larger area under the shoulder peak around 950 cm-1 (16.7%), relative to the H510 counterpart (only 1%), the full width at half maxima (FWHM) being almost four times. This corroborates the preceding observation of lower variation of bond angle with depth from the heat-treated surface before scratch (stabilised initial network). The third shoulder corresponding to around 1040 cm-1 was assigned to the stretching vibration of a depolymerised Si-O unit, which was slightly debatable to be assigned to any specific Qn species [32, 33]. The area under this peak was observed to be much higher for the scratched surface of the heat-treated specimen. The comparative illustration of the normalised integrated areas under the individual peaks (expressed in %) and the corresponding FWHM values is tabulated in Table 2. However, the drawback associated with Raman spectroscopy is its inability for an accurate quantitative analysis, although the area under the peaks can be compared within a particular spectrum to draw apparent interpretive conclusions.
Considering both XPS and Raman investigations of the silicate structure, we propose the following gradient of strength (with respect to silicate network connectivity – distribution of BOs, NBOs, possible variation of Si-O-Si bond angles and Qn species with depth) of silicate network for untreated and sub-Tg heat-treated specimens with depth from the surface–
Figure 7. Gaussian deconvolution of HF Raman band (850 cm-1 to 1250 cm-1) indicating the overlapping peaks corresponding to Qn species present in the scratched network of (a) untreated and (b) heat-treated surfaces. (R-square > 0.99 in both spectral fits).
Table 2
% Area and FWHM of overlapping peaks present in deconvoluted HF Raman band of respective surface scratch grooves.
Peak Label | Normalized Integrated Area (%) | FWHM (cm-1) |
| Untreated | Heat-Treated | Untreated | Heat-Treated |
Q1 | 16.7 | 1 | 82 | 24 |
Q2 | 10.4 | 13 | 56 | 182 |
ν Si-O | 2.6 | 52.5 | 31 | 200 |
Q3 | 56.2 | 31 | 83 | 84 |
Q4 | 14.1 | 2.5 | 90 | 44 |
It is to be noted that the LSM and SEM microstructures of the scratches shown in this paper are only meant for qualitative interpretation, as we did not perform any quantitative statistical analysis in terms of variation of scratch depth and width with applied load, associated with corresponding transitions into different regimes from micro-ductility to micro-abrasion, which are well-established in literature, as discussed in the introduction. We, on the other hand, attempted to interpret the surface structural network of SLS glass to study the possible role played by silicate network connectivity to probe the structural chemistry upholding the root cause of generation of scratches. At this stage, we indeed think it to be a very interesting subject, which deserves more attention in future to extend this work in terms of 29Si MAS NMR study to complementarily determine the distribution of Qn species. Our future target is to try and correlate 29Si NMR results with XPS network connectivity findings reported in this paper; in addition to separately determining the effect of surface roughness and waviness on scratches to subsequently propose a surface structural model of SLS glass, which could possibly further explain the parent cause of scratches induced during the handling and storage of container glass bottles in reality.