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Article
Bo Tian
King Abdullah University of Science and Technology
Corresponding Author
ORCiD: https://orcid.org/0000-0002-1575-0491
Xixiang Zhang
King Abdullah University of Science and Technology
Corresponding Author
ORCiD: https://orcid.org/0000-0002-3478-6414
License:
This work is licensed under a CC BY 4.0 License. Read Full License
Currently, the direct synthesis of inch-scale single-crystal graphene on insulating substrates is limited by the lack of metal catalysis, suitable crystallization conditions, and self-limiting growth mechanisms. In this study, we investigated the direct growth of adlayer-free ultra-flat wafer-scale single-crystal monolayer graphene on insulating substrates by the multi-cycle plasma-etching-assisted chemical vapor deposition (MPE-CVD) method. Firstly, an angstrom-scale growth nanochamber was created by fabricating single-crystal Cu(111) foils on Al2O3(0001) substrates. Graphene was then directly synthesized at the interface between Cu(111) and Al2O3(0001) by MPE-CVD. After growth, the Cu(111) foil was detached using a liquid-nitrogen-assisted separation method, and the ultra-high-quality single-crystal graphene film was experimentally achieved on Al2O3(0001). This work breaks the bottleneck in the direct synthesis of single-crystal monolayer graphene on insulating substrates and paves the way for next-generation carbon-based atomic electronics and semiconductor nanodevices.
Keywords
single-crystal graphene, MPE-CVD, metal catalysis
The full text of this article is available to read as a PDF.
There is NO Competing Interest.
This is a list of supplementary files associated with this preprint. Click to download.
- SUPPLE1.mp4
Supplementary Video 1-Schematic animation of direct growth of single-crystal graphene on insulating substrates by MPE-CVD
- RevisedSupplementaryInformation.pdf
Supplementary Information - revised
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See the published version of this preprint at Nature Materials.
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Learn more about In Review
Article
Bo Tian
King Abdullah University of Science and Technology
Corresponding Author
ORCiD: https://orcid.org/0000-0002-1575-0491
Xixiang Zhang
King Abdullah University of Science and Technology
Corresponding Author
ORCiD: https://orcid.org/0000-0002-3478-6414
Badges
Prescreen
This manuscript passed our Prescreen assessment
Complete author information
Appropriate declaration statements
Potential risks to human health
Prescreen
Peer Review Timeline
CURRENT STATUS: Published
View the published article at Nature Materials.
Version 1
Posted 17 May, 2021
Metrics
Comments: 0
PDF Downloads: ...
HTML Views: ...
Subject Areas
Materials Chemistry
License:
This work is licensed under a CC BY 4.0 License. Read Full License
View the published article at Nature Materials.
Currently, the direct synthesis of inch-scale single-crystal graphene on insulating substrates is limited by the lack of metal catalysis, suitable crystallization conditions, and self-limiting growth mechanisms. In this study, we investigated the direct growth of adlayer-free ultra-flat wafer-scale single-crystal monolayer graphene on insulating substrates by the multi-cycle plasma-etching-assisted chemical vapor deposition (MPE-CVD) method. Firstly, an angstrom-scale growth nanochamber was created by fabricating single-crystal Cu(111) foils on Al2O3(0001) substrates. Graphene was then directly synthesized at the interface between Cu(111) and Al2O3(0001) by MPE-CVD. After growth, the Cu(111) foil was detached using a liquid-nitrogen-assisted separation method, and the ultra-high-quality single-crystal graphene film was experimentally achieved on Al2O3(0001). This work breaks the bottleneck in the direct synthesis of single-crystal monolayer graphene on insulating substrates and paves the way for next-generation carbon-based atomic electronics and semiconductor nanodevices.
The full text of this article is available to read as a PDF.
There is NO Competing Interest.
This is a list of supplementary files associated with this preprint. Click to download.
- SUPPLE1.mp4
Supplementary Video 1-Schematic animation of direct growth of single-crystal graphene on insulating substrates by MPE-CVD
- RevisedSupplementaryInformation.pdf
Supplementary Information - revised
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