Resistive switching in MoS2 embedded PVP composite-based ReRAM with Al and Ag electrodes is reported. A cost-free drop cast method was used to deposit active layers consisting of 30 wt%, 40 wt%, and 70 wt% of MoS2 in PVP. Each system exhibited unique electroforming and switching mode. Asymmetrical bipolar resistive switching occurring only in the positive voltage bias, a typical bipolar resistive switching and a typical ‘O-type’ resistive switching were observed for the 30 wt%, 40 wt%, and 70 wt% systems, respectively. Furthermore, injection of charge carriers at the electrode/active layer interface and electrochemical metalization mechanisms drove the formation of a nanoscale conductive filament in the device A and B. On the other hand, we attributed the conduction mechanism of device C to hopping conduction. Our results demonstrate the behaviour of MoS2 embedded PVP composite-based ReRAM has a strong dependence on the amount of MoS2 and that both the switching and conduction mechanism can be exploited by controlling the amount of MoS2 in the composite.