Following sections explain the great influences of several parameters on laser beam power attenuation, including: laser beam incidence angle, distance between the sample and power meter, concentration of the nanofiller.
The influence of laser beam incident angle on laser power attenuation
Laser beam attenuation characteristics were investigated using different angle of incidence to the surface of thin films. The two laser systems have been used including the green laser (with output power of 1.5 mW) and the semiconductor laser (with output power of 15 mW). Fig.2, shows the normalized output power attenuation for pure PEO using green laser (green line) as a function of incidence angle of laser beam on the thin film. From the figure it can be seen clearly that the normalized output power decreases greatly with decreasing the angle from normal incidence (90°) which means reduction of perpendicularity. For the normal incidence of laser beam on the sample the normalized output power is 0.14, while for the incidence angle of 135°/45° the normalized output power will became 0.07.
Similar results of laser beam attenuation were obtained for pure PEO thin film using semiconductor laser system (fig.2, red line). The normalized output power for the normal angle (angle of incidence 90°) between laser beam and the surface of the samples is 0.076, while for the angle of incidence 135°/45° the normalized output power became 0.031.
The physical principles and mechanism of the increasing the laser beam power absorption by the samples with decreasing/ increasing the angle of laser beam incidence from the normal incidence (90°) explained as follow: When the angle of incidence change and the thin film became tilt the sample, the laser beam radiation will passes more distance, in turn when the sample tilt has more molecules per unit volume, which means more absorption or more attenuation of the laser beam power, for both green laser and semiconductor laser (Poornesh et al. 2009). The change in normalized output power for green laser is greater than the change in normalized output power for semiconductor laser, this is partially related to the shorter wavelength of green laser. Also possibly the prepared pure PEO thin film samples more sensitive to the shorter wavelength.
Laser beam attenuation characteristics with changing the distance between sample and the power meter.
The influence of the changing the distance between the pure PEO thin film and the power meter were investigated for both green laser and semiconductor laser. The green laser with output power 1.5 mW and semiconductor laser with the output power 25 mW were used for this part of our work. From the fig.3, it can be seen that the distance between the sample and the power meter has great impact on the laser beam power attenuation. The normalized power have maximum values 0.46, 0.32 for green laser and semiconductor laser respectively with the zero distance (when the sample placed directly in front of the optical power meter). The figure shows that when the distance between the sample and optical power meter is 6 cm, the normalized output power decreases rapidly to 0.14, 0.044 for green laser and semiconductor laser respectively.
The decreasing in normalized output power with increasing the distance between the sample and the power meter for both laser systems, is mainly due to increasing the dispersion process of the laser beam after passing through the sample.
Nanofiller concentration effect on laser beam attenuation characteristics
The ability of PEO doped with difference concentrations Pb3O4 for laser beam attenuation were investigated using both green laser (with output power 0.75 mW) and semiconductor laser (with output power = 20 mW). Figure 4 shows the normalized output power for pure PEO thin film is 0.42, 0.37 for green laser and semiconductor laser respectively. While adding 3% Pb3O4 the normalized power decreases, and this normalized output power became nearly zero for a high concentration of Pb3O4. The robust laser beam attenuation characteristics with high concentration doping potentially due to increased number of molecules per unit volume, which are involved in the interaction of the laser beam with samples (Ali et al. 2020; Mohammed et al. 2018).