The synthesis and characterization of high mobility thin films of La-doped SrSnO 3 are reported. The mobility for the 7% La-doped sample is found to be 228 cm 2 V -1 s -1 . The observed high mobility is associated with the reduced carrier effective mass and scattering centers of various scattering mechanisms. The enhancement in mobility and the increase in carrier concentration after doping reduced the resistivities of the thin films by 5 orders of magnitude. X-ray absorption spectroscopy and X-ray photoelectron spectroscopy revealed that La-dopant and oxygen vacancies donate the electrons in the films. Films were highly transparent (> 90%) in the visible region. These materials have great potential to be used in the optoelectronic and heterostructure devices.