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Research Article
SONI PRAYOGI
Universitas Syiah Kuala
Corresponding Author
ORCiD: https://orcid.org/0000-0002-2996-5047
License:
This work is licensed under a CC BY 4.0 License. Read Full License
Backround:
In this study, we report for the first time that the addition of an intrinsic layer to the a-Si: H p-i-n solar cell structure greatly enhances the conversion efficiency. The a-Si: H p-i-n solar cells were grown using Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques on the Indium Tin Oxide (ITO) substrate and added an intrinsic layer with the p-i1-i2-n structure in order to prevent sunlight energy from being absorbed the first intrinsic layer can be absorbed by the second intrinsic layer.
Result
The a-Si: H p-i-n and p-i1-i2-n solar cells were characterized including optical properties, electrical properties, surface morphology, thickness, band-gap using Ellipsometric Spectroscopy (ES). Furthermore, from the optical constant and thin film thickness, the reflectance and transmittance of each sample were obtained. The p-i-n and p-i1-i2-n samples show good transparency in the infrared region and this transparency decreases in the visible light region shows an interference pattern with a sharp decrease in transmission at the absorption edge and the performance of solar cells (curve I-V) measured by use sun simulator and sunshine.
Conclussion:
Our results show that there is a very good increase in the efficiency of the a-Si: H p-i1-i2-n solar cells by 58.6% of the original p-i-n structure.
Keywords
Solar cell, a-Si: H, p-i-n, p-i1-i2-n, PECVD, ES
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CURRENT STATUS: Under Review
Version 1
Posted 22 Mar, 2021
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Received 19 Mar, 2021
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Subject Areas
Electrical Engineering
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This preprint is under consideration at Optical and Quantum Electronics. A preprint is a preliminary version of a manuscript that has not completed peer review at a journal. Research Square does not conduct peer review prior to posting preprints. The posting of a preprint on this server should not be interpreted as an endorsement of its validity or suitability for dissemination as established information or for guiding clinical practice.
Learn more about In Review
Research Article
SONI PRAYOGI
Universitas Syiah Kuala
Corresponding Author
ORCiD: https://orcid.org/0000-0002-2996-5047
Badges
Prescreen
This manuscript passed our Prescreen assessment
Complete author information
Appropriate declaration statements
Potential risks to human health
Prescreen
Peer Review Timeline
CURRENT STATUS: Under Review
Version 1
Posted 22 Mar, 2021
No community comments so far
Reviewers invited
Invitations sent on 19 Mar, 2021
Reviews received
Received 19 Mar, 2021
First submitted
On 22 Jan, 2021
Metrics
Comments: 0
PDF Downloads: ...
HTML Views: ...
Subject Areas
Electrical Engineering
License:
This work is licensed under a CC BY 4.0 License. Read Full License
Backround:
In this study, we report for the first time that the addition of an intrinsic layer to the a-Si: H p-i-n solar cell structure greatly enhances the conversion efficiency. The a-Si: H p-i-n solar cells were grown using Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques on the Indium Tin Oxide (ITO) substrate and added an intrinsic layer with the p-i1-i2-n structure in order to prevent sunlight energy from being absorbed the first intrinsic layer can be absorbed by the second intrinsic layer.
Result
The a-Si: H p-i-n and p-i1-i2-n solar cells were characterized including optical properties, electrical properties, surface morphology, thickness, band-gap using Ellipsometric Spectroscopy (ES). Furthermore, from the optical constant and thin film thickness, the reflectance and transmittance of each sample were obtained. The p-i-n and p-i1-i2-n samples show good transparency in the infrared region and this transparency decreases in the visible light region shows an interference pattern with a sharp decrease in transmission at the absorption edge and the performance of solar cells (curve I-V) measured by use sun simulator and sunshine.
Conclussion:
Our results show that there is a very good increase in the efficiency of the a-Si: H p-i1-i2-n solar cells by 58.6% of the original p-i-n structure.
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
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