The hot-e lasers based on effectively electron transfer enhanced by electric polarization in perovskite and metal

doi:10.21203/rs.3.rs-2189798/v1

Download PDF

Article

The hot-e lasers based on effectively electron transfer enhanced by electric polarization in perovskite and metal

https://doi.org/10.21203/rs.3.rs-2189798/v1

This work is licensed under a CC BY 4.0 License

Version 1

posted

You are reading this latest preprint version

The hot electron transfer resulting fluorescence enhancement has the significant meaningful for theory and experiment of photoelectric devices studying. However, the laser emission based on hot electron transfer directly is difficult to realize because of the low transfer efficiency. To achieve laser with new generation mechanism base on hot-electron transfer, the optical + electrical excitation simultaneously are proposed for improving the efficiency of hot electron transfer. The lasing behavior at 532 nm are realized with a threshold of 5 kw cm^− 2&1 µA, which can be considered as the hot e transfer lasing. For details, number of hot electrons transfer process were described via transient absorption spectrum according to the improved ground state bleaching and excited state absorption signal in device ON. Through comparing to optical pump only, the quantum efficiencies of hot electron generation (HEG) and hot electron transfer (HET) were increased by this method about 31% and 31% (about 2.2 and 3.5 times), respectively. Efficient hot electron transferring from the charge regulation of metals by adding an electric field was confirmed. Most importantly, a triple gain mode coupling device including local surface plasmon, hot-e transfer and whispering gallery mode was presented in experiment and simulation. This study can provide theoretical and experimental reference for the research of hot electron lasers and device.

Physical sciences/Optics and photonics/Lasers, LEDs and light sources/Free-electron lasers

Physical sciences/Physics/Optical physics/Nanophotonics and plasmonics

Hot-electron lasing

Perovskite

Plasmon

Optical-Electrical co-excitation

Hot-electron is an electron in a semiconductor that absorbed certain energy (such as photons, external electric field, etc.) at the excited state [1]. In recent years, the transfer of hot electrons between different materials has been received remarkable attention, especially in perovskites [2], which has become the most popular semiconductor with the advantages of high optical quantum yield, flexible energy level transition combination, efficient light absorption and luminous [3–4]. Many scholars are devoted to the phenomenon of fluorescence enhancement after hot electron transfer to perovskite. Huang et al [5]. reported the research results on capturing hot electrons in mixed perovskite, and directly observed the migration of hot carriers in CH₃NH₃PbI₃ thin films by using ultrafast transient absorption microscope (TAM) with 50 nm spatial accuracy and 300 fs time resolution. The results suggested that the devices based on hot electron transfer had a potential application and research value in many areas. Cho et al. [6] and Huang et al. [7] continued to report that the combination of noble metal elements with chalcogenide/perovskite materials (Ag-CrS, Ag–CsPbBr₃) can effectively improve the optical emission characteristics by relying on plasmon resonance coupling effects such as metal arrays. Although these studies have achieved some breakthroughs in theory and experiment, this enhancement always stays in the fluorescence stage, which cannot drive the transfer level to realize the population inversion for directly lasing.

Low dimensional lasers are used in communication, photonic smart chips, quantum computers and other cutting-edge scientific fields with flexible structure, high energy efficiency and fast modulation. The operating threshold is an important parameter. The lower the threshold, the easier it is to realize the application of laser in the field of low dimensional devices. At present, the effective way to reduce the threshold has been developed. Bravo [8] et al. reported an ultralow-threshold of 70 W cm^− 2 achieved by the method of up conversion materials coupling on plasmon, which proves the effect of plasmon induction on reducing the threshold. Although the research of electrically excited plasmon is still immature, electrically driven plasmon lasers have been realized. Yang et al. [9] reported a room temperature electrically driven UV plasmonic lasers with a threshold of 70.2 A cm^− 2. Meanwhile, they revealed a mechanism of the injection of electrical carriers through the metallic electrode of the hybrid structure. Although the above researches have achieved a breakthrough in the working threshold of optically excited and electrically excited plasmon lasers, the output intensity is still low. At the same time, the methods they provide to reduce the threshold come from the changes of external materials or structure. Therefore, reducing the laser threshold directly through the changes between atoms or electrons in the device and improving the output quality still need to be further conducted.

Here, we aim to reduce the lasing threshold while improving the output quality by a new mechanism. We will try to control electrons via electrostatic induction caused by optical and electrical co-excitation, so as to improve the transfer efficiency of hot electrons, and finally achieve the hot-e laser device. The hot-e device is composed of Au nanorod array with a WGM mode, which fabricated by a three-beam interference ablation method in experiment. The absorption, emission and simulation of hot-e laser device are presented. The TA spectrum of hot-e transfer and quantum efficiency for confirming enhanced transfer efficiency are provided. Finally, the mechanism is illustrated to explain the co-excitation pumping and three gain hot-e lasing behavior. This paper can be used as a reference for the research ideas of optical modulation and enhancement.

2.1. The synthetic of CsPbBr₃ QDs

The thermal injection method was used to prepare CsPbBr₃ QDs in the experiment. The synthesis of precursor was the first step in the thermal injection. The certain amount of cesium carbonate, oleic acid and octadecene were mixed and heated until the solution clear and bright. Then, PbBr and octadecene were mixed and then also heated to 130° for 60 mins in a three-neck flask. After first heated, the temperature was increased for continue improving about 30 mins until the solution becomes clear. At this time, precursor of 0.5 mL was injected into the solution. Then quickly put it into an ice water bath for cooling. The nucleation and growth of CsPbBr₃ will be completed within 5 s. The details of this method can be seen in the supporting information S1.

2.2. Etching CsPbBr₃ QDs nanorods laser arrays

The photoelectric co-excitation laser device can be fabricated via nine steps. The sapphire Al₂O₃ was selected as the substrate (Fig. 1a₁). The negative electrode was pasted on the substrate firstly (Fig. 1a₂). Then, a thick Au film was covered on the surface of the substrate by pulsed laser deposition PLD to cover the electrode (Fig. 1a₃). The details of PLD can be seen in our previous work [10]. The reverse photoresist was spined on the Au film for etching (Fig. 1a₄). The sample was set to the three-beam interference optical path for nano rod etching (Fig. 1a₅). The details of the three-beam interference optical path can be seen in our previous work [11]. After the step of development, the photoresist nanorod arrays were obtained (Fig. 1a₆). Subsequently, the nanorod array was covered by Au film for patterns transferring (Fig. 1a₇). After transfer, the CsPbBr₃ QDs as the gain medium was dropped on the surface of nanorod array (Fig. 1a₈). Finally, the positive electrode can realize dynamic contact anywhere on the surface to form an electrode circuit (Fig. 1a₉).

2.3. Characterization

The surface morphology information of Au film, CsPbBr₃ QDs and nanorod array were imaged by scanning electron microscope (SEM, JEOLJSM 6500F). The structures of QDs were measured by XRD and Raman spectrum (Bruker D8 Advance and Horiba JobinYvon T6400). The absorption spectrum of the device was tested by a spectrometer (Hitachi, U-4100). The photoluminescence (PL) spectra were measured by the spectrograph (NIR512 and S2000). The photonic simulation was calculated by finite-difference time-domain (FDTD). The transient absorption (TA) spectrum was conducted by using a femtosecond laser (Spectra-Physics, pulse width 150 fs). The details of PL can be seen in the figure S2. The details process of TA measurement was same to our previous work [12].

The SEM picture is displayed in the Fig. 1b. The morphology with square shape of Au + CsPbBr₃ QDs are presented in the left of Fig. 1b. The average size of 10 nm can be seen in the figure S3. The middle picture in Fig. 1b shows the nanorod array with the top view. The radium about 500 nm of nanorod can be confirmed. Meanwhile, the depth of 720 nm is confirmed in the right picture of Fig. 1b, which is decided by the exposure time in the experiment process. The film is plated after etching for high-quality etching pattern, details can be seen in the figure S4. Furthermore, the micro-structure information of Au + CsPbBr₃ and CsPbBr₃ are measured by XRD, as show in the Fig. 1c. Compared with CsPbBr₃, the number of XRD peaks of Au + CsPbBr₃ are increased mostly caused by Au, but did not affect the position of original peak of CsPbBr₃. At the same time, the cube structure is proved. The details of structure model can be seen in figure S5. Besides, the simulation of electron density was carried out through Sesita software to guide the experimental process. A direct current with an intensity of 50 mA is generated in the simulation. The greater electron density in the state of power ON about 10 times than state OFF are illustrated. This means that the Au + CsPbBr₃ after power open is more likely to produce electron polarization. Thus, the probability of hot electron transfer will be improved.

To prove the local surface plasmon (LSP) in metal array and the influence by current On or OFF, the absorption between Au, CsPbBr₃ and Au+CsPbBr₃ are tested firstly. The absorption peaks at 496, 524 and 520 nm are obtained corresponding to the Au, CsPbBr₃ and Au+CsPbBr₃ (OFF), respectively (figure 2a). The 406 nm absorption peak representing resonance wavelength is only found in Au+CsPbBr₃ (OFF), which proves the LSP on the surface due to Au [7, 13]. What’s importantly, both of resonance and absorption peak are improved by electrical power ON in Au+CsPbBr₃. This phenomenon suggests photoelectric excitation can produce more photon absorption consisting with the simulation results in figure 1c. Subsequently, the relationship between absorption and pump condition is studied. The lower intensity of resonance and absorption is observed at the optical pumping with 10 kw cm^-2, 100 kw cm^-2 and 100 MW cm^-2. After the current is added (optical pump stayed at 5 kw cm^-2), the LSP resonance and absorption peak increase with the continuous improving of current from 1 μA to1 mA (figure 2b). This illustrates that the pump condition is linear for the enhancement of resonance and absorption below 1 mA. Besides, to further prove the role of electricphoto excitation, the PL, EL and EPL are compared in figure 3 for understanding the effect of CsPbBr₃ nanorod arrays (The details of preparation can be seen in the figure S6). No matter how the excitation conditions change, the lasing behavior is difficult to be realized by perovskite nanorod array under 100 mW cm^-2 and 50 mA, and only fluorescence peaks at 540 nm are found (figure 2c). This is because the perovskite material still cannot easily realize the population inversion by itself under the action of WGM. Of course, the perovskite laser can be realized under strong excitation [14], but the threshold is too high, and the practicability is poor. Meanwhile, EL and PL of Au+CsPbBr₃ as the comparison group are plotted in the figure 2d. The narrowed PL peak can be considered as the ASE process, which still requires a larger threshold energy for laser emission. The EL spectrum shows that there is almost no luminescence. Finally, the lasing behavior at 532 nm are easily realized by optical and electrical co-excitation for Au+CsPbBr₃. The emission intensity of the laser increases with the gradual increasing of electrical pump (1 μA-1 mA) at the specific optical pump (5 kw cm^-2). The “S” curve of linewidth with current under 1 mA is also plotted in the figure 2f, which illustrates a threshold of 5 kw cm^-2&1 μA.

Furthermore, the intensity of 532 nm lasing is continuously improved as the current reached above 1 mA. Then, the fluorescence range disappears gradually with the expansion of current from 1 mA to 50 mA. The 532 nm laser is a green light always generated by frequency doubling of 355 nm, which has great potential in practical application. The change of laser is shown in the inset of Fig. 2g. Meanwhile, the lasing behavior simulation of device in the region − 1 ~ 1 µm on surface are proceed, as seen in the Fig. 2f. With the increasing current, the electric field intensity in the nanorod array is increased, and the intensity about 20 times higher is calculated. The variation of electric field intensity of a single nanorod is shown in the inset picture. In addition, the relationship between pump current (mA) and peak intensity/linewidth above 1 mA are presented (Fig. 2i-j).

Figure 3a-d compares the TA spectra of Au–CsPbBr₃ laser device in state ON and OFF recorded with a pump wavelength near the SPR at 406 nm. The major ESA signal are depicted in the Fig. 3a and 3c centered at 485 nm, consisting with the TA spectrum below them. It is confirmed that the absorption intensity when the device ON is greater than OFF, which is preferentially seen from the color representing intensity. Then, the TA spectrum in Fig. 3b and 3d gives complete information around peak at resonance (406 nm) and emission (532 nm) from 0.1 ps to 1000 ps. The GSB signal in range 400–450 nm both in device ON and OFF are found, which means that the photonics or electrons transition to the excited state reducing the number of particles in the ground state after absorbing the pump light. However, the higher intensity GSB signal is generated in the device ON, indicating that the extra GSB compared with OFF should be hot electron transfer under optical and electrical co-excitation. Of course, more transitions will lead to the enhancement of ESA signal, as seen in Fig. 3d. Compared with the device OFF, the intensity of ESA are improved by electric pump about 50% in device ON. Finally, the SE signal is enhanced by the increased GSB and ESA process, which will lead to the emission enhancement. Meanwhile, the hot electron transfer process also can be proved by dynamics traces, as shown in the Fig. 3e. The signal recovers exponentially with a lifetime parameter of ~ 0.5 ps close to typical hot-carrier thermalization time [7] in device ON, which suggests no transfer or a little transfer process. However, the multiple exponential decay components are depicted in the result of device On (< 100 fs, as limited by the instrument), which is the evidence of enhanced hot electron transfer [7, 8, 15]. The one of reason for enhanced transfer can be considered as the WGM mode in nanorod structure. The simulation for single nanorod is presented in the Fig. 3f. The cavity with WGM mode is confirmed by the electric field intensity around the rod.

Whether the transfer efficiency of hot electrons is enhanced by EPL can be directly given by quantum efficiency (QE) test. The QEs of hot electron generation (HEG) in Au and hot electron transfer (HET) to CsPbBr₃ can be considered as the evaluation basis, the plasmon-induced hot electron transfer is proportional to the product QE HEG and HET (supporting information S7). The HEG and HET can be express by the formula follows [15]:

$${QE}_{HEG}\left(R\right)\infty \frac{{\gamma }_{s}\left(R\right)}{{\gamma }_{t}\left(R\right)}$$

$${QE}_{HET}\left(R\right)=\alpha \left(R\right)\frac{(\hslash \omega -{E}_{b}(R){)}^{2}}{\hslash \omega }$$

Where the ${\gamma }_{t}\left(R\right)$ is total plasmon dephasing rate, the ${\gamma }_{s}\left(R\right)$ is additional surface dephasing rate, $\alpha$ is the competition factor, $\hslash \omega$ is the photon energy, ${E}_{b}$ is the barrier height which is determined by the energy difference between the semiconductor conduction band edge and Fermi level in metal. Both of the measured and simulated are plotted in the Fig. 3g and 3h corresponding to the optical and optical & electrical pump. In the Fig. 3g for optical pumping, the stable QE HEG of 28% & 25.5% and QE HET of 14% & 13.8% are obtained in simulation and measurement, respectively. The loss of 14% is illustrated from hot electrons generation to transfer. Homologous in the Fig. 3h in terms of optical & electrical pumping, the stable QE HEG of 56% & 55.3% and QE HET of 49% & 47.5% are obtained in simulation and measurement, respectively. The loss of 7% is illustrated from hot electrons generation to transfer. Comparing to optical pump, the QEs of HEG and HET are increase about 31%, and the QEs of HEG and HET are improved by EP pump about 2.2 and 3.5 times, which suggest the co-excitation can promote the formation of population inversion and the enhancement of laser emission effectively. The comparison with Refs. [16–22] of plasmonic nanolasers can be seen in supporting information S8.

The true evidence would be generated PL in the materials when pumping with light below its bandgap as a large number of below bandgap photons would still be able to create high energy electrons. Thus, the 808 nm excitation are adopted for more concrete evidence, as seen in Fig. 4. The fluorescence emission at 532 nm is confirmed under 808 nm excitation, which stronger proved the hot electron transfer emission.

The comparison analysis of optical and optical & electrical are discussed, as shown in the Fig. 5a. Under the condition of only optical pumping, the nanorod array is excited to produce LSP on its surface. The hot electrons in the nanorod will transfer to the gain material perovskite under the induction of this resonance. Among the hot electrons above the Fermi level, only a portion of them has the required energy and momentum to cross the metal/semiconductor interface to realize transfer on CB band in semiconductor, which can be accounted by Fowler’s model [23]. However, these slightly transfers may achieve fluorescence enhancement [6, 7], but they are not enough for forming and emitting a laser. The reason for this difficult can be explained by the irregular charge distribution. A large number of charge distributions in metals are irregular, that is, only some electrons on the surface will be transferred after being induced by excitons. If this charge distribution can be regulated, the purpose of enhancing the efficiency of hot electron transfer can be realized. Therefore, the electrical pump is added for adjusting the charge distribution in metal (electrostatic induction). Under the action of electric field, metal will produce electron polarization, which will lead to the regular distribution of electrons or charges [24]. At this time adding an optical excitation, a large number of electrons with certain kinetic energy and regular distribution at the boundary can be transferred after receiving plasmon resonance induction. We also verify this opinion through simulation. In the case of electric field absence, only plasmons resonate on the side of the nanorod are found. However, the electron polarized LSP are generated when the electric field is added in the Y direction.

Clearly, only relying on the transfer of hot electrons to form a laser is not enough. Here, we present a triple gain coupling device including LSP, Hot-e and WGM, as shown in Fig. 5b. The LSP is generated at the initial stage under optical and electrical co-excitation, which is the first gain. Then, the second gain of hot-e transfer is induced by LSP for energy level enhancement. Finally, the LSP and hot-e are further cycle strengthened via the third gain of WGM mode in nanorod array. After the triple gain, the laser emission with low threshold and high intensity can be realized, which is also realized in the simulation. The lasing behavior in nanorod array is photographed in real time via a micro area spectrometer under UV excited. The WGM mode can be directly seen from the Fig. 5c. Besides, the information of hot-e transfer behavior in energy level is depicted in the Fig. 5d. The weak light emission is generated under the condition only optical pump. What’s importantly, a large number of hot electron or cavity can be transferred from metal Au to CB or VB in semiconductor CsPbBr₃, resulting the 532 nm lasing emission enhancement.

In summary, we demonstrate a method of optical and electrical co-excitation for 532 nm lasing based on hot electron transfer in Au-CsPbBr₃. The nanorod array with radium of 500 nm and depth of 720 nm was obtained by three beam pulsed laser ablation combined with PLD. The LSP and absorption in Au-CsPbBr₃ under photo-electric co-excitation are proved by absorption spectrum in steady-state. Thus, the lasing behavior at 532 nm was realized with a threshold of 5 kw cm^− 2&1 µA, which can be considered as the hot-e lasing. For details, number of hot electrons transfer process are described by TA spectrum according to the improved GSB and ESA signal in device ON. Meanwhile, the multiple exponential decay components are also evidence for hot e transfer. Through comparing to only optical pump, the QEs of HEG and HET are increased about 31% and 31%, and the QEs of HEG and HET are improved by optical and electrical co-excitation about 2.2 and 3.5 times, respectively. This data suggests the co-excitation can effectively promote the formation of population inversion and laser emission. Finally, the hot-e lasing mechanism analysis is provided for more significance of reference. Efficient hot electron transfer comes from the charge regulation of metals by adding an electric field are confirmed. Most importantly, a triple gain coupling device including LSP, Hot-e and WGM is presented in experiment and simulation. This paper can provide theoretical basis and experimental reference for the research of hot electron laser.

Competing interests: The authors declare that they have no competing interests.

Data and materials availability: All data needed to evaluate the conclusions in the paper are present in the paper and/or the Supplementary Materials. Additional data related to this paper may be requested from the authors.

[1] C. H. Cho, C. O. Aspetti, J. Park and R. Agarwal. Silicon coupled with plasmon nanocavities generates bright visible hot luminescence [J]. Nature Photonics, 7, 285-289. (2013)

[2] K. Y. Jeong, M. S. Hwang, J. Kim, J. S. Park, J. M. Lee, H. G. Park. Recent progress in nanolaser technology [J]. Advanced Materials, 32, 2001996. (2020)

[3] R. M. Ma, R. F. Oulton. Applications of nanolasers [J]. Nature Nanotechnology, 14, 12-22. (2019)

[5] Zhi Guo, Yan Wan, et al. Long-range hot-carrier transport in hybrid perovskites visualized by ultrafast microscopy. Science, 356, 59-62. (2017)

[6] C. H. Cho, C. O. Aspetti, M. E. Turk, J. M. Kikkawa, S. W. Nam and R. Agarwal. Tailoring hot-exciton emission and lifetimes in semiconducting nanowires via whispering-gallery nanocavity plasmons [J]. Nat. Mater., 10, 669-675. (2011)

[7] X. Y. Huang, H. B. Li, C. F. Zhang, S. J. Tan, Z. Z. Chen, L. Chen, Z. D. Lu, X. Y. Wang and M. Xiao. Efficient plasmon-hot electron conversion in Ag–CsPbBr₃ hybrid nanocrystals [J]. Nat. Commun., 10, 1163. (2019)

[8] A. F. Bravo, D. Wang, E. S. Barnard, A. Teitelboim, C. Tajon, J. Guan, G. C. Schatz, B. E. Cohen, E. M. Chan, P. J. Schuck, T. W. Odom. Ultralow-threshold, continuous-wave upconverting lasing from subwavelength plasmons [J]. Nat. Mater., 18, 1172-1176. (2019)

[9] Yang, X.; Ni, P.-N.; Jing, P.-T.; Zhang, L.-G.; Ma, R.-M.; Shan, C.-X.; Shen, D.-Z.; Genevet, P. Room Temperature Electrically Driven Ultraviolet Plasmonic Lasers. Adv. Opt. Mater., 2019, 7, 1801681.

[10] Y. Pan, L. Huang, W. Sun, D. L. Gao, L. Li*, Invisibility Cloak Technology of Anti-Infrared Detection Materials Prepared Using CoGaZnSe Multilayer Nanofilms, ACS Appl. Mater. Inter., 2021, 13, 33, 40145–40154.

[11] Y. Pan, L. Wang, X. Su, D. Gao, P. Cheng, Nanolasers Incorporating Co_xGa_0.6–xZnSe_0.4 Nanoparticle Arrays with Wavelength Tunability at Room Temperature, ACS Appl. Mater. Inter., 2021, 13, 5, 6975–6986.

[12] Y. Pan, L. Wang, Y. Zhang, X. Su, D. Gao, R. Chen, L. Huang, W. Sun, Y. Zhao, D. Gao, Multi-Wavelength Laser Emission by Hot-Carriers Transfers in Perovskite-Graphene-Chalcogenide Quantum Dots, Adv. Opt. Mater., 2022, 2201044.

[13] D. Xing, C. Lin, P. Won, R. Xiang, T. Chen, A. S. A. Kamal, Y. Lee, Y. Ho, S. Maruyama, S. H. Ko, C. Chen, J. Delaunay. Metallic nanowire coupled CsPbBr₃ quantum dots plasmonic nanolaser [J]. Adv. Func. Mater., 31, 2102375. (2021)

[14] A. P. Schlaus, M. S. Spencer, X. Y. Zhu, Light−Matter Interaction and Lasing in Lead Halide Perovskites, Acc. Chem. Res. 2019, 52, 2950−2959.

[15] Y. Liu, Q. Chen, D. A. Cullen, Efficient Hot Electron Transfer from Small Au Nanoparticles, Nano Lett., 2020, 20, 4322−4329.

[16] Oulton, R. F.; Sorger, V. J.; Zentgraf, T.; Ma, R.-M.; Gladden, C.; Dai, L.; Bartal, G.; Zhang, X. Plasmon Lasers at Deep Subwavelength Scale. Nature 2009, 461, 629−632.

[17] Khajavikhan, M.; Simic, A.; Katz, M.; Lee, J. H.; Slutsky, B.; Mizrahi, A.; Lomakin, V.; Fainman, Y. Thresholdless Nanoscale Coaxial Lasers. Nature 2012, 482, 204−207.

[18] Wang, S.; Chen, H.-Z.; Ma, R.-M. High Performance Plasmonic Nanolasers with External Quantum Efficiency Exceeding 10%. Nano Lett. 2018, 18, 7942−7948.

[19] Yang, X.; Ni, P.-N.; Jing, P.-T.; Zhang, L.-G.; Ma, R.-M.; Shan, C.-X.; Shen, D.-Z.; Genevet, P. Room Temperature Electrically Driven Ultraviolet Plasmonic Lasers. Adv. Opt. Mater. 2019, 7, 1801681.

[20] Y. Wang, J. Yu, Y. F. Mao, J. Chen, S. Wang, H. Z. Chen, Y. Zhang, S. Y. Wang, X. Chen, T. Li, L. Zhou, R. M. Ma, S. Zhu, W. Cai, J. Zhu. Stable high-performance sodium-based plasmonic devices [J]. Nature, 581, 401-405. (2020)

[21] D. Xing, C. Lin, P. Won, R. Xiang, T. Chen, A. S. A. Kamal, Y. Lee, Y. Ho, S. Maruyama, S. H. Ko, C. Chen, J. Delaunay. Metallic nanowire coupled CsPbBr₃ quantum dots plasmonic nanolaser [J]. Adv. Func. Mater., 31, 2102375. (2021)

[22] G. Li, B. Zhou, Z. Hou, Y. Wei, R. Wen, T. Ji, Y. Wei, Y. Hao, Y. Cui. Transfer printing of perovskite whispering gallery mode laser cavities by thermal release tape [J]. Nanoscale Research Letters, 17, 8. (2022)

[23] Fowler, R. H. The Analysis of Photoelectric Sensitivity Curves for Clean Metals at Various Temperatures. Phys. Rev. 1931, 38 (1), 45−56.

[24] Y. Liang, C. Li, Y. Huang, Q. Zhang, Plasmonic Nanolasers in On-Chip Light Sources: Prospects and Challenges, ACS Nano 2020, 14, 14375−14390.

There is NO Competing Interest.

SupportingInformation.pdf
Supporting information

Download PDF

Version 1

posted

You are reading this latest preprint version

The hot-e lasers based on effectively electron transfer enhanced by electric polarization in perovskite and metal

Status:

Version 1

Abstract

Figures

1. Introduction

2. Experimental

2.1. The synthetic of CsPbBr₃ QDs

2.2. Etching CsPbBr₃ QDs nanorods laser arrays

2.3. Characterization

3. Results

4. Conclusion

Declarations

References

Additional Declarations

Supplementary Files

Status:

Version 1

The hot-e lasers based on effectively electron transfer enhanced by electric polarization in perovskite and metal

Status:

Version 1

Abstract

Figures

1. Introduction

2. Experimental

2.1. The synthetic of CsPbBr3 QDs

2.2. Etching CsPbBr3 QDs nanorods laser arrays

2.3. Characterization

3. Results

4. Conclusion

Declarations

References

Additional Declarations

Supplementary Files

Status:

Version 1

2.1. The synthetic of CsPbBr₃ QDs

2.2. Etching CsPbBr₃ QDs nanorods laser arrays