Tetraethyl orthosilicate (TEOS) was used as the silicon source, and polydimethylsiloxane (PDMS) was the organic precursor to modify the surface of glass fiber (GF) through the sol-gel method. The modified GF noted T-GF was filled in PTFE to prepare PTFE/T-GF composites. SEM, FTIR, XPS, and contact angle confirmed that organic-inorganic hybrids were successfully loaded on GF's surface. Compared with PTFE/GF and the conventional coupling agent modified GF filled PTFE composites, the properties of PTFE/T-GF composites, including dielectric properties, mechanical properties, moisture absorption, thermal conductivity, and coefficient of thermal expansion (CTE), enhanced significantly for the improvement of compatibility of PTFE and GF. Moreover, the PTFE/T-GF exhibited improved dielectric constant (2.305), decreased dielectric loss (9.08E-4), higher bending strength (21.45 MPa) and bending modulus (522 MPa), better thermal conductivity (0.268 W/m*K) and lower CTE (70 ppm/℃), making it has promising application as the substrate materials for printed circuit board.
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Posted 16 Mar, 2021
Posted 16 Mar, 2021
Tetraethyl orthosilicate (TEOS) was used as the silicon source, and polydimethylsiloxane (PDMS) was the organic precursor to modify the surface of glass fiber (GF) through the sol-gel method. The modified GF noted T-GF was filled in PTFE to prepare PTFE/T-GF composites. SEM, FTIR, XPS, and contact angle confirmed that organic-inorganic hybrids were successfully loaded on GF's surface. Compared with PTFE/GF and the conventional coupling agent modified GF filled PTFE composites, the properties of PTFE/T-GF composites, including dielectric properties, mechanical properties, moisture absorption, thermal conductivity, and coefficient of thermal expansion (CTE), enhanced significantly for the improvement of compatibility of PTFE and GF. Moreover, the PTFE/T-GF exhibited improved dielectric constant (2.305), decreased dielectric loss (9.08E-4), higher bending strength (21.45 MPa) and bending modulus (522 MPa), better thermal conductivity (0.268 W/m*K) and lower CTE (70 ppm/℃), making it has promising application as the substrate materials for printed circuit board.
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
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