Investigation of electrical and structural properties of Ag/TiO2/n-InP/Au Schottky diodes with different thickness TiO2 interface

doi:10.21203/rs.3.rs-233916/v1

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Investigation of electrical and structural properties of Ag/TiO2/n-InP/Au Schottky diodes with different thickness TiO2 interface

https://doi.org/10.21203/rs.3.rs-233916/v1

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Journal Publication

published 03 Apr, 2021

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In this study, structural and electrical properties of Ag/TiO₂/n-InP/Au Schottky barrier diodes are investigated. Particle size, d- spacing, micro-strain, ideality factor and barrier heights of two samples are determined for two different interfacial TiO₂ layer thickness. X-ray diffraction (XRD) and current-voltage (I-V) measurements are employed for mentioned parameters. It is seen that sample with 60 Å TiO₂ interfacial layer is a more ideal diode. The reason for this is argued in main text and conclusion section.

Electronic Materials and Devices

Schottky

structural

electrical

n-InP

TiO2

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Journal Publication

published 03 Apr, 2021

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Reviewers invited by journal
18 Feb, 2021
Reviews received at journal
18 Feb, 2021
Editor assigned by journal
11 Feb, 2021
Editor invited by journal
11 Feb, 2021
First submitted to journal
11 Feb, 2021

You are reading this latest preprint version

Investigation of electrical and structural properties of Ag/TiO2/n-InP/Au Schottky diodes with different thickness TiO2 interface

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