In this study, structural and electrical properties of Ag/TiO2/n-InP/Au Schottky barrier diodes are investigated. Particle size, d- spacing, micro-strain, ideality factor and barrier heights of two samples are determined for two different interfacial TiO2 layer thickness. X-ray diffraction (XRD) and current-voltage (I-V) measurements are employed for mentioned parameters. It is seen that sample with 60 Å TiO2 interfacial layer is a more ideal diode. The reason for this is argued in main text and conclusion section.