[1] F. Feldmann, M. Bivour, C. Reichel, H. Steinkemper, M. Hermle, S.W. Glunz, Tunnel oxide passivated contacts as an alternative to partial rear contacts, Sol. Energy Mater. Sol. Cells, 131 (2014) 46-50.
[2] A. Moldovan, F. Feldmann, M. Zimmer, J. Rentsch, J. Benick, M. Hermle, Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO2 layers, Solar Energy Materials and Solar Cells, 142 (2015) 123-127.
[3] M.A. Green, R.B. Godfrey, MIS solar cell - General theory and new experimental results for silicon, Applied Physics Letters, 29 (1976) 610-612.
[4] J.Y. Bian, L.P. Zhang, W.W. Guo, D.L. Wang, F.Y. Meng, Z.X. Liu, Improved passivation effect at the amorphous/crystalline silicon interface due to ultrathin SiOx layers pre-formed in chemical solutions, Applied Physics Express, 7 (2014) 065504.
[5] J.P. Seif, A. Descoeudres, M. Filipiè, F. Smole, M. Topiè, Z. Charles Holman, S. De Wolf, C. Ballif, Amorphous silicon oxide window layers for high-efficiency silicon heterojunction solar cells, Journal Of Applied Physics, 115 (2014) 024502.
[6] K. Ohdaira, T. Oikawa, K. Higashimine, H. Matsumura, Suppression of the epitaxial growth of Si films in Si heterojunction solar cells by the formation of ultra-thin oxide layers, Current Applied Physics, 16 (2016) 1026–1029.
[7] R. Rölver, B. Berghoff, D. Bätzner, B. Spangenberg, H. Kurz, M. Schmidt, B. Stegemann,Si/SiO2 multiple quantum wells for all silicon tandem cells: Conductivity and photocurrent measurements, Thin Solid Films, 516 (2008) 6763-6766.
[8] B. Stegemann, A. Schoepke, M. Schmidt, Structure and photoelectrical properties of SiO2/Si/SiO2 single quantum wells prepared under ultrahigh vacuum conditions, Journal of Non-Crystalline Solids, 354 (2008) 2100.
[9] S.W. Glunz, F. Feldmann, A. Richter, M. Bivour, C. Reichel, H. Steinkemper, J. Benick, M. Hermle, The Irresistible Charm of a Simple Current Flow Pattern – 25% with a Solar Cell Featuring a Full-Area Back Contact, in: 31st European Photovoltaic Solar Energy Conference, 2015, pp. 259 - 263.
[10] F.J. Grunthaner, P.J. Grunthaner, Chemical and electronic structure of the SiO2/Si interface, Materials Science Reports, 1 (1986) 65.
[11] F.J. Himpsel, F.R. McFeely, A. Taleb-Ibrahimi, J.A. Yarmoff, G. Hollinger, Microscopic structure of the SiO2/Si interface, Phys. Rev. B, 38 (1988) 6084-6096.
[12] K. Hirose, H. Nohira, K. Azuma, T. Hattori, Photoelectron spectroscopy studies of SiO2/Si interfaces, Progr. Surf. Sci., 82 (2007) 3.
[13] M.T. Sieger, D.A. Luh, T. Miller, T.C. Chiang, Photoemission Extended Fine Structure Study of the SiO_{2}/Si(111) Interface, Physical Review Letters, 77 (1996) 2758.
[14] D.A. Luh, T. Miller, T.C. Chiang, Statistical Cross-Linking at the Si(111)/SiO_{2} Interface, Physical Review Letters, 79 (1997) 3014.
[15] K.L. Brower, Kinetics of H2 passivation of Pb centers at the (111) Si-SiO2 interface, Physical Review B, 38 (1988) 9657-9666.
[16] H. Flietner, Spectrum and Nature of Defects at Interfaces of Semiconductors with Predominant Homopolar Bonding, Surface Science, 200 (1988) 463-471.
[17] B.E. Deal, A.S. Grove, General Relationship for the Thermal Oxidation of Silicon, J. Appl. Phys., 36 (1965) 3770.
[18] T. Hattori, Chemical Structures of the SiO2Si Interface, Critical Reviews in Solid State and Materials Sciences, 20 (1995) 339-382.
[19] O. Buiu, G. Kennedy, M. Gartner, S. Taylor, Structural analysis of silicon dioxide and silicon oxynitride films produced using an oxygen plasma., IEEE Transactions on Plasma Science, 26 (1998) 1700-1712.
[20] D.W. Hess, Plasma-assisted oxidation, anodization, and nitridation of silicon, IBM Journal of Research and Development, 43 (1999) 127-145.
[21] S.K. Sharma, B.C. Chakravarty, S.N. Singh, B.K. Das, Oxidation of silicon in RF induced oxygen plasma, Journal of Materials Science Letters, 9 (1990) 982-984.
[22] M.A. Szymanski, A.M. Stoneham, A. Shluger, The different roles of charged and neutral atomic and molecular oxidising species in silicon oxidation from ab initio calculations, Solid-State Electr., 45 (2001) 1233.
[23] H. Angermann, Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements, Applied Surface Science, 312 (2014) 3-16.
[24] D. Starodub, E. P. Gusev, E. Garfunkel, T. Gustafsson, Silicon oxide decomposition and desorption during the thermal oxidation of silicon, Surface Review and Letters, 6 (1999) 45-52.
[25] Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices, eds. E. Garfunkel, E. Gusev and A. Vul' (Kluwer, Dordrecht/Boston/London, 1998).
[26] A. Ishizaka and Y. Shiraki, J. Electrochem. Soc. 133 (1986) 666.
[27] N. Daldosso, G. Das, S. Larcheri, G. Mariotto, G. Dalba, L. Pavesi, A. Irrera, F. Priolo, F. Iacona, F. Rocca, Silicon nanocrystal formation in annealed silicon-rich silicon oxide films prepared by plasma enhanced chemical vapor deposition, JOURNAL OF APPLIED PHYSICS 101 (2007) 113510.
[28] F. Chau, N. Hong, C. Yan, Synthesis and characterization of silicon oxide nanoparticles using an atmospheric DC plasma torch, Advanced Powder Technology 2 (2018) 220–229.
[29] K. Kayed, B. Chiyah, The Structural and Optical Properties of Silver Oxide Thin Films Synthesized by Thermal Evaporation of Silver with Subsequent Annealing, Aerosol Science and Engineering 4(2020) 271–276.
[30] P.Lange, W.Windbracke, Characterization of thermal and deposited thin oxide layers by longitudinal optical-transverse optical excitation in fourier transform IR transmission measurements, Thin Solid Films 174 (1989) 159-164.
[31] K. Kayed, L. Alberni,The Effect of Annealing Temperature on the Plasma Edge in Reflectance Spectra of Al/Al2O3 Composites Synthesized by Thermal Oxidation of Aluminum Thin Films, Plasmonics 15(2020) 1959–1966.
[32] K. Kayed, The Optical Properties of Individual Silver Nanoparticles in Ag/Ag2O Composites Synthesized by Oxygen Plasma Treatment of Silver Thin Films, Plasmonics 15(2020) 1439–1449.
[33] Kubelka P, Munk F (1931) Ein beitrag zur optik der farbanstriche. Z Tech Phys 12:593–601.
[34] Kubelka P (1948) New contributions to the optics of intensely lightscattering materials. Part I. J Opt Soc Am 38:448–457.