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Research Article
Ibrahim Abbas
Department of mathematics, Faculty of Science, Sohag University, Sohag, Egypt
Corresponding Author
ORCiD: https://orcid.org/0000-0001-9595-439X
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Analytical and numerical solutions are two basic tools in the study of photothermal interaction problems in semiconductor medium. In this paper, we compare the analytical solutions with the numerical solutions for thermal interaction in semiconductor mediums containing spherical cavities. The governing equations are given in the domain of Laplace transforms and the eigenvalues approaches are used to obtained the analytical solution. The numerical solutions are obtained by applying the implicit finite difference method (IFDM). A comparison between the numerical solutions and analytical solution are presented. It is found that the implicit finite difference method (IFDM) is applicable, simple and efficient for such problems.
Keywords
Finite difference method, Semiconductor material, Laplace transforms, spherical cavity, eigenvalues scheme
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This preprint is under consideration at Silicon. A preprint is a preliminary version of a manuscript that has not completed peer review at a journal. Research Square does not conduct peer review prior to posting preprints. The posting of a preprint on this server should not be interpreted as an endorsement of its validity or suitability for dissemination as established information or for guiding clinical practice.
Learn more about In Review
Research Article
Ibrahim Abbas
Department of mathematics, Faculty of Science, Sohag University, Sohag, Egypt
Corresponding Author
ORCiD: https://orcid.org/0000-0001-9595-439X
Badges
Prescreen
This manuscript passed our Prescreen assessment
Complete author information
Appropriate declaration statements
Potential risks to human health
Prescreen
Metrics
Comments: 0
PDF Downloads: ...
HTML Views: ...
Subject Areas
Nanoscience
License:
This work is licensed under a CC BY 4.0 License. Read Full License
Analytical and numerical solutions are two basic tools in the study of photothermal interaction problems in semiconductor medium. In this paper, we compare the analytical solutions with the numerical solutions for thermal interaction in semiconductor mediums containing spherical cavities. The governing equations are given in the domain of Laplace transforms and the eigenvalues approaches are used to obtained the analytical solution. The numerical solutions are obtained by applying the implicit finite difference method (IFDM). A comparison between the numerical solutions and analytical solution are presented. It is found that the implicit finite difference method (IFDM) is applicable, simple and efficient for such problems.
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
This preprint is available for download as a PDF.
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