The successful handling of large semiconductor wafers is crucial for their production on a large scale. Recently, the development of pilot lines using 8" wide band gap substrates, such as silicon carbide, has brought about similar challenges. Early-stage warpage control is essential to prevent uncontrolled asymmetric warpage, known as wafer bifurcation or buckling, which can occur with 8" 4H-SiC substrates, too. Moreover, the manufacturing process for large 4H-SiC wafers can be challenging due to warping during finishing and processing. Even in a gravity-free environment, thinning an 8" or 12" wafer can result in warpage and bifurcation. To mitigate this issue, the taiko method, which involves creating a thicker ring region around the rim of the wafer, has been widely used. Previous research has focused on the theoretical factors affecting the warpage of a backside metalized taiko wafer. This study extends the case of a front-side metalized taiko wafer and introduces the concept of the equivalent thickness to a 4H-SiC large taiko wafer. The equivalent thickness lies between the thickness of the central region and the annular region due to the influence of the ring region. Modelling can be helpful due to the limited number of taiko wafers that can be produced in a production line. In the investigation we developed both an analytical approach and a finite element analysis (FEA) with ANSYSY® software to model the equivalent thickness of a 4H-SiC taiko wafer. We investigated the curvature as a function of the stress of the metal layer, considering key design factors such as the substrate region thickness, thin metal film thickness, step height, and width of the annular ring region. By systematically varying the thickness of the central region of the taiko wafer, we investigated the curvature as a function of stress induced by thermal loads in the linear regime. The aim of this study is to identify regularities and similarities with the Stoney equation and investigate the validity of the analytical approach for the case of a 4H-SiC substrate.