The present paper provides a study about the capacity of a crystalline silicon photovoltaic (PV) cell to resist well to electromagnetic field effects. The novelty of this study is found in the identification of a better doping rates range where a crystalline silicon PV cell can resist well against the deterioration of its performances due to an electromagnetic field. After the fundamental equations solve, the electrical parameters and individual energetic processes have been analysed. The estimated current of the PV cell decreases weakly when the base dopant level (N B) increase from 10 14 cm −3 to 10 17 cm −3 and the voltage, however, increases strongly. Beyond 10 17 cm −3 , the currents gives a strong decrease in contrast the voltage which provides a low increase. That can be explained by a best resistivity to the electromagnetic field found at 10 17 cm −3 and is consistent with the maximum electric power found in this doping level. Thermalization mechanism does not affected by the electromagnetic field and doping rate. But the analyses of the thermodynamic process behaviour and fill factor on the one hand and on the other hand the behaviour of the absorption mechanism, show that the best capability resistivity to the electromagnetic field is found at 10 17 cm −3. Hence the base doping in boron level can be used to improve the electromagnetic resistivity of the PV cell in crystalline silicon with a well control of the Light-Induced Degradation (LID).