The scientific significance of the research results is that new technological processes for the preparation of semiconductor detectors based on the Si(Li) p-i-n structure with nuclear radiation were identifed and their electrophysical characteristics were determined. These results are explained by the fact that they are of great importance in the practical application of various semiconductor devices. The practical significance of the research results is the development and implementation of Si(Li) p-i-n structural detectors based on semiconductor monocrystalline silicon.