In this work, we have proposed a Trench gate vertical feedback field-effect transistor (TG-V-FBFET) utilizing the positive feedback mechanism. Simulation and result extraction of the device is done using computer aided TCAD tool (ATLAS-SILVACO). Proposed device exhibits Subthreshold swing (SS) of 0.013mV/dec and on state current (Ion) of 0.1mA/µm with overall Ion/Ioff = 1010. Overall on chip area can be reduce up to 66% compared to lateral FBFET counter-part. Further-more, steep subthreshold slope characteristic of the device is exploited for the producing of Leaky Integrate and Fire neuron like spiking behavior. Circuit level simulations consisting proper resetting as well, is also done to properly implement single LIF neuron. Proposed LIF neuron shows a spiking frequency of 0.86GHz/spike and energy of 0.13pJ/spike for input current and threshold potential of 0.9mA and 1.3V respectively.