Understand and regulate the effect of Intra-NI on BDE.
Firstly, to explore the comprehensive effect of Intra-NI on BDE and rationally regulate these effects, we designed a series module molecules based on 9-phenyl-9H-carbazole (9-PhCz), a widely-used substructure in typical OLED molecules (Fig. 2a). The module molecules were divided into two groups: non-ortho-substituted derivatives of 9-PhCz in group A without Intra-NI and their ortho-substituted isomers in group B with Intra-NI. The BDE values of the exocyclic C-N bonds were calculated by M06-2X-D3/6–31 + G* on inclusion of dispersion correction, which was proved suitable for describing Intra-NI (details in Supplementary Fig. 3–5, Supplementary Table 2–3). As shown in Fig. 2b and Supplementary Table 4, all C-N BDE values of molecules in group A are comparable to that of 9-PhCz, which is in line with previous results that non-ortho-substituents on C side have little influence on BDE29. In comparison, all BDEs of molecules in group B show a large disparity depending on the specific ortho-substituents. Compared with 9-PhCz, BDE of B1 is decreased by 0.15 eV with ortho-tBu to Cz. This result is consistent with previous cognition that ortho-substituents with large steric hindrance would decrease BDE29,33. However, in B2 with an ortho-Cz group, BDE is increased by 0.20 eV instead. Then in B3, the BDE of C-N bond from central Cz with two ortho-Cz groups is further increased by 0.37 eV. These results are opposed to previous report on ortho steric effects29,33. In addition to adding more ortho groups, modifications to ortho groups could also increase BDE. Compared with 9-PhCz, BDE values in B4 and B5 with tBu/phenyl on 3,6 sites of ortho-Cz are increased by 0.39 eV and 0.43 eV, respectively. Notably, in B6, C-N BDE of central tBu-Cz is dramatically increased by 0.68 eV, almost two times increase of B3.
Independent gradient model (IGM)37 analysis was performed to explore why introduction of tBu/phenyl can bring such remarkable increase in BDE. The size of green and blue areas in IGM plots can reflect the strength of attractive part of Intra-NI, which is beneficial to improving BDE38–40. Figure 2c clearly shows H∙∙∙H contacts41 between tBu groups in B4 and B6. Such H∙∙∙H contacts further reduce the bending angles between two Cz π planes (eg. 37° vs 17° for B2 and B4), which means a better coplanarity and a closer distance of π-groups in B4 and B6. Accordingly, in B4, such H∙∙∙H contacts between tBu groups and π-π interaction between adjacent Cz groups work together to facilitate a greater improvement in BDE. The synergistic effect in B5 is the extra π-π interaction between four phenyl groups. Importantly, in B6, such H∙∙∙H contacts and bilateral ortho-substitutions work synergistically to endow C-N bond with the highest BDE up to 4.92 eV (Fig. 2b), which clearly demonstrates greater influence of bilateral substitutions than unilateral substitution on the same C-N bond, also in the case for B3 and B2. For common OLED molecules with other donors, such as 9,9-dimethyl-9,10-dihydroacridine, phenoxazine, and phenothiazine derivatives, Intra-NI likewise improves their BDEs (Supplementary Fig. 6).
To shed light on the mechanism of improved BDE by stabilizing Intra-NI, we comparatively analyzed BDE values, molecular electronic energy E(M), and total electronic energy of fragments Etot(F) for isomers in group A/B (Fig. 3a). We found that E(M) values of ortho-substituted molecules are substantially lowered by the stabilizing Intra-NI compared with those of non-ortho-substituted counterparts. Meanwhile, every pair of non-ortho- and ortho-substituted isomers (such as A1 and B1) has almost identical Etot(F) values after bond cleavage. As a result, the difference of BDE (ΔBDE) between every pair of isomers almost equals the difference in their molecular energy (ΔE(M)). As shown in Fig. 3b, there is an excellent linear correlation between ΔBDE and ΔE(M) within ~ 1 eV, which just reflects the distinct stabilizing effects of Intra-NI in molecules.
Moreover, we employed functional-group partitioned symmetry-adapted perturbation theory (F-SAPT)42 to decompose Intra-NI of molecules B1, B2, B4, and B6 into electrostatic interaction, repulsive exchange interaction, induced interaction, and attractive dispersion interaction (Fig. 3c and Supplementary Table 5). In principle, the sum of four interactions is approximately equal to ΔE(M). As shown in Fig. 3c, B1 has greater repulsive exchange interaction than attractive dispersion interaction between tBu and Cz groups, which will destabilize the molecule and decrease BDE. In comparison, B2 exhibits greater attractive interaction including dispersion and induction between two ortho-Cz groups, which will stabilize molecule and increase BDE instead. Things are slightly different in B4 and B6, which show almost the same magnitude increase of dispersion interaction and exchange interaction, so that their effects cancel each other out. Nonetheless, the tBu substitution and bilateral ortho-groups promote the attractive electrostatic interaction and induction interaction considerably, thus providing more stabilizing Intra-NI to improve the BDE. The results of F-SAPT analysis confirm that even though repulsion interaction between ortho-substitutions do harm to BDE, as long as the substitution groups can bring enough attraction interactions, the overall effect of Intra-NI would improve BDE rather than impair it. Moreover, the stronger the stabilizing Intra-NI, the larger the BDE values. This result provides a new perspective for rationally regulating BDE by Intra-NI and makes up the puzzle of why 4CzBN with significant Intra-NI have large BDE and BDE-ET1 values (4.46 and 1.76 eV) than DCzTrz (4.24 and 1.60 eV) in introduction.
Design robust pure-blue TADF material employing Intra-NI
On the basis of phenomenal effects of Intra-NI on BDEs, we attempted to design a robust pure-blue TADF emitter by combining the advancements of Intra-NI in improving photophysical properties. We chose 4TCzBN and 5TCzBN with top two BDE-ET1 values (Fig. 1b) as parent molecules and targeted to address their weaknesses for robust pure-blue emission. For 4TCzBN, its fragile C1-N BDE and BDE-ET1 value are increased to 4.67 eV and 2.07 eV from 4CzBN of 4.46 eV and 1.76 eV credited to the extra tBu groups at 3,6-sites of Cz (Fig. 1 and Fig. 4). Correspondingly, the device lifetime of 4TCzBN is longer than 4CzBN (54 h vs 20 h). However, its frontier molecule orbitals (FMOs) have considerable distribution at unprotected para-site of cyan group (Supplementary Fig. 7), being vulnerable to be attacked. Moreover, the absence of substitution at para-site of cyan group brings larger probability for C-N bonds rotation and reduces molecule rigidity, which is not desired for an ideal TADF sensitizer36. As for 5TCzBN, it is not a pure-blue emitter due to five strong donors of tBu-Cz, leading to emission peak at 477 nm and device CIEy>0.408. Meanwhile, the BDE value of fragile C1-N bond in 5TCzBN is relatively lower than that in 4TCzBN (4.56 eV vs 4.67 eV) due to strong Intra-NI between ortho C2-Cz and C3-Cz in fragment after C1-Cz bond cleavage (Fig. 4a). To address these issues, we added one 1,3-di-tert-butylbenzene (DTPh) group onto para-site of cyan in 4TCzBN to regulate Intra-NI, in other words, replacing the para tBu-Cz in 5TCzBN by a relatively electron-inert group DTPh and designed 4TDTBN (Fig. 4a). As expected, this targeted modification indeed results in desired improvements. For 4TDTBN, C-N BDE values are sufficiently improved to 4.68 and 4.86 eV owing to enhanced stabilizing Intra-NI (Fig. 4b), which are the highest C-N BDEs for blue TADF materials ever reported (Supplementary Table 1). At the same time, emission peak of 4TDTBN is successfully blue-shifted to 465 nm compared with 5TCzBN of 477 nm, which leads to remarkable reduction in CIEy from 0.31 to 0.18 for pure-blue emission (Fig. 4a and Supplementary Fig. 8).
With the aim to realize pure-blue emission, we comparatively explored the effects of Intra-NI on material and device performances of 4TDTBN and 4TCzBN. The lowest singlet excited state (S1) energies are estimated to be 2.91 and 2.92 eV for 4TDTBN and 4TCzBN, respectively, from the onset of fluorescence spectra (Fig. 4c), and T1 energies are estimated to be 2.70 and 2.60 eV from the first peak of phosphorescence spectra (Supplementary Fig. 9). Accordingly, their ∆EST values are calculated to be 0.21 eV and 0.32 eV, respectively. PLQY values of 4TDTBN and 4TCzBN in degassed solution are 99% and 98%, and decrease to 89% and 79% in doped film with a doping concentration of 30 wt% in stable exciplex-forming host comprising 9-(3-(triphenylsilyl) phenyl)-9H-3,9′-bicarbazole (SiCzCz) and 9,9′-(6-(3-(triphenylsilyl) phenyl)-1,3,5-triazine-2,4-diyl)bis(9H-carbazole) (SiTrzCz2) with a ratio of 6:4. The smaller decrease in PLQY of 4TDTBN from solution to film-state could be attributed to the eliminated vulnerable para-site and well-protected FMOs, which increase intermolecular distance and suppresses annihilation of excited states8 (Supplementary Fig. 10a). Importantly, the emission peak of 4TDTBN in film-state shows only 1 nm red-shift to 466 nm compared with 4TCzBN of 8 nm (Fig. 4c). MD analysis shows that this result could be credited to the enhanced molecule rigidity of 4TDTBN, which suppresses the dihedral-angle inhomogeneity and lower-energy conformers in film-state (Supplementary Fig. 10–11). Prompt/delayed fluorescence lifetimes (τp/τd) of 4TDTBN and 4TCzBN are 5.85 ns/7.44 µs and 3.22 ns/10.65 µs, respectively (Fig. 4d and Supplementary Table 6). Radiative rate (kr), knr, and kRISC values are correspondingly calculated to be 1.88×107, 0.41×106, 10.9×105 s− 1 for 4TDTBN and 4.66×107, 7.64×106, 4.95×105 s− 1for 4TCzBN with the assumption of knrT=0 (More calculation details is in Supplementary Table 7–8). For 4TDTBN, the larger τp and smaller kr could be ascribed to its smaller oscillator strength of 0.12 than 4TCzBN of 0.17, while the shorter τd and larger kRISC could be attributed to smaller ∆EST and extra TSCT channels originating from the weak electron-withdrawing ability of DTPh (Supplementary Fig. 12) 43. Importantly, knr value of 4TDTBN is more than 10 times smaller than that of 4TCzBN. This surprising result could be credited to enhanced molecule rigidity and suppressed C-N bond rotation by improved Intra-NI. It is worth remembering that apart from the above satisfying photophysical properties, 4TDTBN has increased BDE values, eliminated vulnerable site, and well-protected molecule structure benefiting from enhanced Intra-NI, suggesting 4TDTBN would exhibit better performance as a pure-blue TADF emitter than 4TCzBN. Moreover, according to the key requirements for an ideal sensitizer of TSF-OLEDs36, the longer τp and enhanced molecule rigidity likewise guarantee 4TDTBN a promising TADF sensitizer for robust deep-blue TSF-OLED.
Device performances of pure-blue TADF and deep-blue TSF-OLEDs.
To validate the superior performance of 4TDTBN, TADF-OLEDs were fabricated with a multilayered structure of ITO/HATCN (5 nm)/NPB (30 nm)/SiCzCz (10 nm)/SiCzCz: SiTrzCz2: TADF emitter (0.60:0.40:0.30) (40 nm)/SiTrzCz2 (5 nm)/DPPyA:Liq (1:1, 30 nm)/LiF (0.5 nm)/Al (150 nm) (Fig. 5a and Supplementary Fig. 13). Electroluminescence (EL) peaks of 4TDTBN and 4TCzBN are 461 nm and 458 nm, respectively, which are both blue-shifted compared with PL peaks in film-state (Supplementary Fig. 14). The blue-shifted EL peaks result in CIEy of 0.16 for 4TDTBN and 0.15 for 4TCzBN. Figure 5b shows EQE-luminance characteristics, revealing similar and high EQEmax values of 27.6% for 4TDTBN and 26.8% for 4TCzBN, owing to their high PLQY values and effective utilization of triplet excitons. Figure 5b also illustrates the device operational lifetimes measured at a constant current density of 10 mA cm− 2. As expected, device based on 4TDTBN exhibits a longer device lifetime of 6.2 h with an initial luminance L0 of 2577 cd m− 2 compared with 4TCzBN (5.1 h with L0 of 2319 cd m− 2). By adopting a degradation acceleration factor that relates luminance to lifetime, viz. LT80 (500 cd m− 2) = LT (L0) × (\(\frac{{L}_{0}}{500}\))n with n = 1.753, LT80@500 cd m− 2 for 4TDTBN and 4TCzBN are 109.3 and 74.8 h, respectively. The longer device lifetime of 4TDTBN is originated from harmonious improvement in material intrinsic stability and photophysical properties including well-protected molecule structures, enhanced BDEs, and higher kRISC values. Encouragingly, the device of 4TDTBN is the most stable pure-blue TADF-OLEDs with CIEy<0.20 ever reported (Fig. 1a and Supplementary Table 9). Notably, the positive correlation between device lifetime and BDE-ET1 could also be applied to 4TDTBN (Fig. 1b), which again confirms the strong power of “longevity gene” in describing material intrinsic stability and even corresponding device lifetime16.
To further shift the EL spectra to deep-blue range with CIEy≤0.10, we selected the popular deep-blue multi-resonance material v-DABNA as terminal emitter and fabricated TSF-OLED devices. The large overlaps between fluorescence spectra of 4TDTBN, 4TCzBN and absorption spectrum of v-DABNA in doped film guarantee that 4TDTBN and 4TCzBN would both well sensitize v-DABNA (Supplementary Fig. 15). At present, TSF-OLEDs have been widely employed to improve device operational stability and color purity2,3,5,18,17,36,44. However, to date, few blue TADF sensitizer was ever reported to be appropriate for robust deep-blue TSF emission3,5. The formidable challenge is still how to simultaneously improve material intrinsic stability and photophysical properties of TADF sensitizers themselves. Monkman et al. recently proposed key requirements that an ideal TADF sensitizer should possess rigid molecule structure to suppress the low excited energy conformations and long τp value to achieve efficient energy transfer, which is exemplified by a spiro-linked TADF molecule ACRSA36. However, C-N BDE in ACRSA (3.70 eV) is much lower than that in Cz (4.24 eV), which results in a much poorer longevity gene of 0.90 eV than 4TDTBN (1.98 eV). Consequently, LT80@500 cd m− 2 of TADF and TSF devices based on ACRSA are reported to be 2.5 h and 6.2 h, respectively36, leaving a large room for improvement. Herein, as exemplified in 4TDTBN, enhancing Intra-NI is a superior strategy to simultaneously improve molecule rigidity and longevity gene.
As shown in Fig. 5c, TSF devices based on 4TDTBN and 4TCzBN have similar EL peak of 467 nm while the full width at half maximum (FWHM) of 4TDTBN is 17 nm, which is smaller than 4TCZBN of 18 nm. More notably, 4TCzBN shows larger tail at the long wavelength region, which suggests incomplete energy transfer36, resulting in a larger CIEy of 0.12 than 4TDTBN of 0.10. The deeper blue emission of devices based on 4TDTBN could be attributed to higher molecular rigidity induced by enhancing Intra-NI and longer τp value as aforementioned. Figure 5d shows the EQE-luminance characteristics, revealing high EQEmax> 20% for both 4TDTBN and 4TCzBN. The EQEmax of 4TDTBN is 25.4% and EQE value at 1000 cd m− 2 (EQE1000) is 22.2%, representing a suppressed efficiency roll-off of 13% compared with 4TCzBN of 21%. This could be attributed to elimination of vulnerable para-site in 4TDTBN and well-protected FMOs by peripheral tBu groups, which largely suppresses triplet-triplet annihilation (TTA) process8. Furthermore, similar to TADF devices, TSF-OLED based on 4TDTBN exhibits remarkable LT80@500 cd m− 2 of 81.5 h (Table 1). It is worth mentioning that, in deep-blue emission range with CIEy≤0.10, only one TSF-device has been reported with device lifetime of LT80@500 cd m− 2=7.6 h45 (Supplementary Table 10), which again demonstrates the formidable challenge to develop robust TADF sensitizer for deep-blue TSF-devices. Most importantly, TSF-device based on 4TDTBN exhibited smaller efficiency roll-off and longer device lifetime, strongly confirming that targeted regulation of Intra-NI has the capability to tackle the above formidable challenge.
Table 1
Summary of device performances based on 4TCzBN and 4TDTBN.
Device Type | Emitter/ Sensitizer | Vona (V) | λEL (nm) | FWHM (nm) | EQEb (%) | Roll-offc (%) | CIEd | LT80e (h) |
TADF | 4TDTBN | 2.7 | 461 | 55 | 27.6/24.2/22.5 | 18 | (0.15,0.16) | 109.3 |
4TCzBN | 3.0 | 458 | 52 | 26.8//23.9/21.9 | 18 | (0.15,0.15) | 74.8 |
TSF | 4TDTBN | 3.0 | 467 | 17 | 25.4/24.9/22.2 | 13 | (0.13, 0.10) | 81.5 |
4TCzBN | 3.1 | 467 | 18 | 21.5/18.2/16.9 | 21 | (0.13, 0.12) | 20.4 |
a Von values were recorded at 1 cd m− 2. b EQE values recorded at maxima, 500 and 1,000 cd m− 2. c Efficiency roll-off value is calculated by (1-\(\frac{{\text{E}\text{Q}\text{E}}_{1000}}{{\text{E}\text{Q}\text{E}}_{\text{m}\text{a}\text{x}}}\))×100%. d CIE values at the initial luminance of 1,000 cd m− 2. e LT80 values at the initial luminance of 500 cd m− 2.