Figure 1a shows a schematic of an SOI nanowire waveguide integrated with a GO film. The SOI nanowire was fabricated on an SOI wafer via CMOS compatible fabrication processes, with opened windows on the silica upper cladding so as to enable GO film coating onto the SOI nanowire. The coating of 2D layered GO films was achieved by a solution-based method that yielded layer-by-layer GO film deposition. Our GO coating method can achieve precise control of the film thickness with an ultrahigh resolution of ~2 nm, which is challenging for spin coating methods. Further, our GO coating approach, unlike the sophisticated transfer processes (e.g., using scotch tape) employed for coating other 2D materials such as graphene and TMDCs [34, 35], enables transfer-free GO film coating on integrated photonic devices, with highly scalable fabrication processes as well as high fabrication stability and repeatability.
Figure 1b shows a microscope image of a fabricated SOI chip with a 0.4-mm-long opened window. Apart from allowing precise control of the placement and coating length of the GO films that are in contact with the SOI nanowires, the opened windows also enabled us to test the performance of devices having a shorter length of GO film but with higher film thicknesses (up to 20 layers). This provided more flexibility to optimize the device performance with respect to SPM spectral broadening.Figure 1c shows the scanning electron microscopy (SEM) image of an SOI nanowire conformally coated with 1 layer of GO. Note that the conformal coating (with the GO film coated on both the top surface and sidewalls of the nanowire) is slightly different to earlier work where we reported doped silica devices with GO films only coated on the top surface of the waveguides [30, 31]. As compared with doped silica waveguides, the SOI nanowires allow much stronger light-material interaction between the evanescent field leaking from the waveguide and the GO film, which is critical to enhance nonlinear optical processes such as SPM and FWM. Figure 1d shows the successful integration of GO films which is confirmed by the representative D (1345 cm-1) and G (1590 cm-1) peaks of GO observed in the Raman spectrum of an SOI chip coated with 5 layers of GO. Microscope images of the same SOI chip before and after GO coating are shown in the insets, which illustrate good morphology of the films.
Figure 2 shows the results of the SPM experiments. Figure 2a-i shows the normalized spectra of the optical pulses before and after transmission through the SOI nanowires with 2.2-mm-long, 1−3 layers of GO, together with the output optical spectrum for the bare SOI nanowire, all taken with the same pulse energy of ~51.5 pJ (i.e., ~13.2 W peak power, excluding coupling loss) coupled into the SOI nanowires. As compared with the input pulse spectrum, the output spectrum after transmission through the bare SOI nanowire exhibited measurable spectral broadening. This is expected and can be attributed to the high Kerr nonlinearity of silicon. The GO-coated SOI nanowires, on the other hand, show much more significantly broadened spectra as compared with the bare SOI nanowire, clearly reflecting the improved Kerr nonlinearity of the hybrid waveguides. Figure 2a-ii shows the corresponding results for the SOI nanowires with 0.4-mm-long, 5−20 layers of GO, taken with the same coupled pulse energy as in Figure 2a-i. The SOI nanowires with a shorter GO coating length but higher film thicknesses also clearly show more significant spectral broadening as compared with the bare SOI nanowire. We also note that in either Figure 2a-i or 2a-ii, the maximum spectral broadening is achieved for a device with an intermediate number of GO layers (i.e., 2 and 10 layers of GO in a-i and a-ii, respectively). This could reflect the trade-off between the Kerr nonlinearity enhancement (which dominates for the device with a relatively short GO coating length) and loss increase (which dominates for the device with a relatively long GO coating length) for the SOI nanowires with different numbers of GO layers.
Figures 2b-i and b-ii show the power-dependent output spectra after going through the SOI nanowires with (i) 2 layers and (ii) 10 layers of GO films. We measured the output spectra at 10 different coupled pulse energies ranging from ~8.2 pJ to ~51.5 pJ (i.e., coupled peak power from ~2.1 W to ~13.2 W). As the coupled pulse energy was increased, the output spectra showed increasing spectral broadening as expected. We also note that the broadened spectra exhibited a slight asymmetry. This was a combined result of both the asymmetry of the input pulse spectrum and the free-carrier effect of silicon including both the free carrier absorption (FCA) and free carrier dispersion (FCD) [36]. Since the time response for the generation of free carries is slower compared to the pulse width, there is a delayed impact of FCA on the pulse shape, which leads the spectral asymmetry of the optical pulses. The FCD further broadens the asymmetry induced by FCA, resulting in more obvious spectral asymmetry at the output.
To quantitively analyze the spectral broadening of the output spectra, we introduce the concept of a broadening factor (BF, defined as the square of the pulse’rms spectral width at the waveguide output facet divided by the corresponding value at the input [37]). Figure 2c shows the BFs of the measured output spectra after transmission through the bare SOI nanowire and the GO-coated SOI nanowires at pulse energies of 8.2 pJ and 51.5 pJ. The GO-coated SOI nanowires show higher BFs than the bare SOI nanowires (i.e., GO layer number = 0), and the BFs at a coupled pulse energy of 51.5 pJ are higher than those at 8.2 pJ, agreeing with the results in Figures 2a and 2b, respectively. At 51.5 pJ, BFs of up to 3.75 and 4.34 are achieved for the SOI nanowires with 2 and 10 layers of GO, respectively. This also agrees with the results in Figure 2a − with the maximum spectral broadening being achieved for an intermediate number of GO layers due to the trade-off between the Kerr nonlinearity enhancement and increase in loss. The BFs of the output spectra versus coupled pulse energy are shown in Figures 2d-i and 2d-ii for the SOI nanowires with 1−3 layers and 5−20 layers of GO, respectively. The BFs increase with coupled pulse energy, reflecting a more significant spectral broadening that agrees with the results in Figure 2b.
Figure 3a shows Kerr coefficient (n2) of the GO films versus layer number for fixed coupled pulse energies of 8.2 pJ and 51.5 pJ, which is extract from the effective nonlinear parameter (γeff) of the hybrid waveguides using the following equation [30]:
![](https://myfiles.space/user_files/58854_b38fc7f3db2c487f/58854_custom_files/img1619061465.png)
where λc is the pulse central wavelength, D is the integral of the optical fields over the material regions, Sz is the time-averaged Poynting vector calculated using Lumerical FDTD commercial mode solving software, n0 (x, y) and n2 (x, y) are the linear refractive index and n2 profiles over the waveguide cross section, respectively.
The picosecond optical pulses used in our experiment had a relatively small spectral width (< 10 nm), we therefore neglected any variation in n2 arising from its dispersion and used n2 instead of the more general third-order nonlinearity χ(3) in our subsequent analysis and discussion. The values of n2 are over three orders of magnitude higher than that of silicon and agree reasonably well with our previous waveguide FWM [30] and Z-scan measurements [28]. Note that the layer-by-layer characterization of n2 for GO is challenging for Z-scan measurements due to the weak response of extremely thin 2D films [25, 28]. The high n2 of GO films highlights their strong Kerr nonlinearity for not only SPM but also other third-order (c(3)) nonlinear processes such as FWM, and possibly even enhancing (c(3)) for third harmonic generation (THG) and stimulated Raman scattering [38-40]. In Figure 3a, n2 (both at 51.5 pJ and 8.2 pJ) decreases with GO layer number, showing a similar trend to WS2 measured by a spatial-light system [41]. This is probably due to increased inhomogeneous defects within the GO layers as well as imperfect contact between the different GO layers. Although the n2 of GO decreases with layer number, the increase in mode overlap with GO more than compensates for this, resulting in a net increase in γeff with layer number. At 51.5 pJ, n2 is slightly higher than at 8.2 pJ, indicating a more significant change in the GO optical properties with inceasing power. We also note that the decrease in n2 with GO layer number becomes more gradual for thicker GO films, possibly reflecting the transition of the GO film properties towards bulk material properties − with a thickness independent n2.
To quantitively analyze the improvement in the nonlinear performance of the GO-coated SOI nanowires, we further calculated the effective nonlinear FOM (FOMeff ) for the GO-coated SOI nanowires. The resulting FOMeff (normalized to the FOM of silicon) is shown in Figure 3b where we see that a very high FOMeff of 20 times that of silicon is achieved for the hybrid SOI nanowires with 20 layers of GO. This is remarkable since it indicates that by coating SOI nanowires with GO films, not only can the nonlinearity be significantly enhanced but the relative effect of nonlinear absorption can be greatly reduced as well. This is interesting given that the GO films themselves cannot be described by a nonlinear FOM since the nonlinear absorption displays saturable absorption (SA) rather than TPA, and yet nonetheless the GO films still are able to reduce the βTPA, eff) of the hybrid waveguides, thus improving the overall nonlinear performance.